AFT05MP075N datasheet(4/21 Pages) NXP

Numer części	AFT05MP075N

Szczegółowy opis	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

PDF	21 Pages

Scroll/Zoom	100%

Producent	NXP [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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4 / 21 page

RF Device Data

Freescale Semiconductor, Inc.

AFT05MP075NR1 AFT05MP075GNR1

TYPICAL CHARACTERISTICS

300

010

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 2. Capacitance versus Drain--Source Voltage

100

Measured with 30 mV(rms)ac @ 1 MHz, VGS =0 Vdc

Crss

Ciss

Coss

VDS, DRAIN--SOURCE VOLTAGE (VOLTS)

Figure 3. Drain Current versus Drain--Source Voltage

VGS =3.75 Vdc

Note: Measured with both sides of the transistor tied together.

812

3Vdc

TA =25C

2.5 Vdc

250

TJ, JUNCTION TEMPERATURE (C)

Figure 4. MTTF versus Junction Temperature -- CW

Note:

MTTF value represents the total cumulative operating time

under indicated test conditions.

MTTF calculator available at http://www.freescale.com/rf. Select

Software & Tools/Development Tools/Calculators to access MTTF

calculators by product.

107

106

104

110

130

150

170

190

210

230

108

105

VDD = 12.5 Vdc

ID =6.3 Amps

9.4 Amps

7.8 Amps

3.5 Vdc

3.25 Vdc

Note: Each side of device measured separately.

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