AFT05MP075N datasheet(7/21 Pages) NXP

Numer części	AFT05MP075N

Szczegółowy opis	High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs

PDF	21 Pages

Scroll/Zoom	100%

Producent	NXP [NXP Semiconductors]

Strona internetowa	http://www.nxp.com

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AFT05MP075NR1 AFT05MP075GNR1

RF Device Data

Freescale Semiconductor, Inc.

TYPICAL CHARACTERISTICS — 520 MHz

100

VGS, GATE--SOURCE VOLTAGE (VOLTS)

Figure 7. Output Power versus Gate--Source Voltage

Pin, INPUT POWER (WATTS)

0.1

Figure 8. Power Gain, Output Power and Drain

Efficiency versus Input Power

0.5

1.5

2.5

3.5

4.5

120

VDD = 13.6 Vdc, Pin =1 W

f = 520 MHz

VDD = 12.5 Vdc

Pin =0.5 W

VDD = 12.5 Vdc, Pin =1 W

VDD = 13.6 Vdc, Pin =0.5 W

Gps

D

Pout

VDD = 12.5 Vdc, IDQ(A+B) = 400 mA

f = 520 MHz

VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pout =70 W

MHz

Zsource



Zload



520

0.91 + j2.37

2.56 + j0.27

Zsource = Test circuit impedance as measured from

gate to gate, balanced configuration.

Zload = Test circuit impedance as measured from

drain to drain, balanced configuration.

Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz

Input

Matching

Network

Device

Under

Test

Output

Matching

Network

Zsource

Zload

50 

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