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EPC2021 Arkusz danych(PDF) 3 Page - Espros Photonics corp

Numer części EPC2021
Szczegółowy opis  Enhancement Mode Power Transistor
PDF  6 Pages
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Producent  EPC [Espros Photonics corp]
Strona internetowa  http://www.espros.ch
Logo EPC - Espros Photonics corp

EPC2021 Arkusz danych(HTML) 3 Page - Espros Photonics corp

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eGaN® FET DATASHEET
EPC – THE LEADER IN GaN TECHNOLOGY | WWW.EPC-CO.COM | COPYRIGHT 2019 |
| 3
EPC2021
All measurements were done with substrate shortened to source.
0
20
40
60
80
Figure 5a: Capacitance (Linear Scale)
VDS – Drain-to-Source Voltage (V)
3000
2500
2000
1500
1000
500
0
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
1000
100
10
0
20
40
60
80
Figure 5b: Capacitance (Log Scale)
VDS – Drain-to-Source Voltage (V)
COSS = CGD + CSD
CISS = CGD + CGS
CRSS = CGD
Figure 6: Gate Charge
5
4
3
2
1
0
0
16
10
12
14
2
4
6
8
QG – Gate Charge (nC)
ID = 29 A
VDS = 40 V
0.5
0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
VSD– Source-to-Drain Voltage (V)
Figure 7: Reverse Drain-Source Characteristics
400
300
200
100
0
25˚C
125˚C
VGS = 0 V
Figure 8: Normalized On-State Resistance vs. Temperature
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
ID = 29 A
VGS = 5 V
Figure 9: Normalized Threshold Voltage vs. Temperature
1.40
1.30
1.20
1.10
1.00
0.90
0.80
0.70
0.60
0
25
50
75
100
125
150
TJ – Junction Temperature (°C)
ID = 14 mA



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