EPC2021 datasheet(4/6 Pages) EPC

Numer części	EPC2021

Szczegółowy opis	Enhancement Mode Power Transistor

PDF	6 Pages

Scroll/Zoom	100%

Producent	EPC [Espros Photonics corp]

Strona internetowa	http://www.espros.ch

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4 / 6 page

eGaN® FET DATASHEET

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EPC2021

Figure 12: Transient Thermal Response Curves

VGS– Gate-to-Source Voltage (V)

Figure 10: Gate Leakage Current

25˚C

125˚C

0.1

100

1000

0.1

100

VDS - Drain-Source Voltage (V)

Limited by RDS(on)

Pulse Width

100 ms

10 ms

1 ms

100 µs

Figure 11: Safe Operating Area

tp, Rectangular Pulse Duration, seconds

0.5

0.05

0.02

Single Pulse

0.01

0.1

Duty Cycle:

Junction-to-Board

Notes:

Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJB x RθJB + TB

PDM

10-5

10-4

10-3

10-2

10-1

10+1

0.1

0.01

0.001

0.0001

0.5

0.05

0.02

Single Pulse

0.01

0.1

Duty Cycle:

0.2

tp, Rectangular Pulse Duration, seconds

0.5

Junction-to-Case

Notes:

Duty Factor: D = t1/t2

Peak TJ = PDM x ZθJC x RθJC + TC

PDM

10-6

10-5

10-4

10-3

10-2

10-1

0.1

0.01

0.001

0.0001

TJ = Max Rated, TC = +25°C, Single Pulse

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