EPC2021 datasheet(1/6 Pages) EPC

Numer części	EPC2021

Szczegółowy opis	Enhancement Mode Power Transistor

PDF	6 Pages

Scroll/Zoom	100%

Producent	EPC [Espros Photonics corp]

Strona internetowa	http://www.espros.ch

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eGaN® FET DATASHEET

EPC2021

| 1

EPC2021 eGaN® FETs are supplied only in

passivated die form with solder bumps.

Die Size: 6.05 mm x 2.3 mm

• High Speed DC-DC Conversion

• Motor Drive

• Industrial Automation

• Synchronous Rectification

• Inrush Protection

• Class-D Audio

EFFICIENT POWER CONVERSION

G

D

S

HAL

EPC2021 – Enhancement Mode Power Transistor

Maximum Ratings

PARAMETER

VALUE

UNIT

VDS

Drain-to-Source Voltage (Continuous)

80

V

Drain-to-Source Voltage (up to 10,000 5 ms pulses at 150°C)

96

ID

Continuous (TA = 25°C, RθJA = 3.5°C/W)

90

A

Pulsed (25°C, TPULSE = 300 µs)

420

VGS

Gate-to-Source Voltage

6

V

Gate-to-Source Voltage

-4

TJ

Operating Temperature

-40 to 150

°C

TSTG Storage Temperature

-40 to 150

Thermal Characteristics

PARAMETER

TYP

UNIT

RθJC

Thermal Resistance, Junction-to-Case

0.4

°C/W

RθJB

Thermal Resistance, Junction-to-Board

1.1

RθJA

Thermal Resistance, Junction-to-Ambient (Note 1)

42

Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.

See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.

All measurements were done with substrate connected to source.

Static Characteristics (TJ = 25°C unless otherwise stated)

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

BVDSS

Drain-to-Source Voltage

VGS = 0 V, ID = 1 mA

80

V

IDSS

Drain-Source Leakage

VGS = 0 V, VDS = 64 V

0.1

0.7

mA

IGSS

Gate-to-Source Forward Leakage

VGS = 5 V

1

9

mA

Gate-to-Source Reverse Leakage

VGS = -4 V

0.1

0.7

mA

VGS(TH)

Gate Threshold Voltage

VDS = VGS, ID = 14 mA

0.8

1.4

2.5

V

RDS(on)

Drain-Source On Resistance

VGS = 5 V, ID = 29 A

1.8

2.5

mΩ

VSD

Source-Drain Forward Voltage

IS = 0.5 A, VGS = 0 V

1.6

V

VDS , 80V

RDS(on) , 2.5 mΩ

ID , 90 A

Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very

low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG

and zero QRR. The end result is a device that can handle tasks where very high switching frequency,

and low on-time are beneficial as well as those where on-state losses dominate.

Podobny numer części - EPC2021

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