AM50DL128CH datasheet(60/64 Pages) AMD

60 / 64 page

Am50DL128CH

October 6, 2003

ADV ANCE

I N FO RMAT I O N

FLASH ERASE AND PROGRAMMING PERFORMANCE

Notes:

1. Typical program and erase times assume the following conditions: 25

°C, 3.0 V V

CC, 1,000,000 cycles. Additionally,

programming typicals assume checkerboard pattern.

2. Under worst case conditions of 90

°C, V

CC = 2.7 V, 1,000,000 cycles.

3. The typical chip programming time is considerably less than the maximum chip programming time listed, since most bytes

program faster than the maximum program times listed.

4. In the pre-programming step of the Embedded Erase algorithm, all bytes are programmed to 00h before erasure.

5. System-level overhead is the time required to execute the two- or four-bus-cycle sequence for the program command. See Table

11 for further information on command definitions.

6. The device has a minimum erase and program cycle endurance of 1,000,000 cycles.

LATCHUP CHARACTERISTICS

Note: Includes all pins except V

CC. Test conditions: VCC = 3.0 V, one pin at a time.

PACKAGE PIN CAPACITANCE

Notes:

1. Sampled, not 100% tested.

2. Test conditions T

A = 25°C, f = 1.0 MHz.

FLASH DATA RETENTION

Parameter

Typ (Note 1)

Max (Note 2)

Unit

Comments

Sector Erase Time

0.4

sec

Excludes 00h programming

prior to erasure (Note 4)

Chip Erase Time

sec

Byte Program Time

150

µs

Excludes system level

overhead (Note 5)

Accelerated Byte/Word Program Time

120

µs

Word Program Time

210

µs

Chip Program Time

(Note 3)

Word Mode

sec

Description

Min

Max

Input voltage with respect to V

SS on all pins except I/O pins

(including A9, OE#, and RESET#)

–1.0 V

12.5 V

Input voltage with respect to V

SS on all I/O pins

–1.0 V

CC + 1.0 V

CC Current

–100 mA

+100 mA

Parameter

Symbol

Parameter Description

Test Setup

Typ

Max

Unit

Input Capacitance

IN = 0

OUT

Output Capacitance

OUT = 0

IN2

Control Pin Capacitance

IN = 0

IN3

WP#/ACC Pin Capacitance

IN = 0

Parameter Description

Test Conditions

Min

Unit

Minimum Pattern Data Retention Time

150

°C10

Years

125

°C20

Years

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