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FTK4822D Arkusz danych(PDF) 4 Page - First Silicon Co., Ltd |
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FTK4822D Arkusz danych(HTML) 4 Page - First Silicon Co., Ltd |
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4 / 4 page ![]() 2013.01. 22 4/4 FTK4822D Revision No : 0 Typical Characteristics 0 2 4 6 8 10 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics 0 250 500 750 1000 1250 1500 0 5 10 15 20 25 30 VDS (Volts) Figure 8: Capacitance Characteristics Ciss Coss Crss VDS=15V ID=8.5A VDS, Drain-Source Voltage (V) Figure 9. Maximum Safe Operating Area 10 2 10 1 10 0 10 3 10 2 10 1 10 0 10 -1 Single Pulse TC=25 C TJ=150 C RDS(ON)Limit 10ms DC 100µs 1ms 10 -2 PDM t1 t2 1. R甬JC (t)=r (t) * R甬JC 2. R甬JC=See Datasheet 3. TJM-TC = P* R甬JC (t) 4. Duty Cycle, D=t1/t2 10 0 Single Pulse 0.01 10 -1 10 -2 10 3 10 4 10 2 10 1 10 0 10 -1 0.02 0.05 0.1 0.2 D=0.5 Square Wave Pulse Duration (msec) Figure 10. Normalized Thermal Transient Impedance Curve |
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