FTK4822D datasheet(2/4 Pages) FS

2 / 4 page

2013.10. 22

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FTK4822D

Revision No : 0

Electrical characteristics (Ta=25

℃ unless otherwise noted)

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

STATIC PARAMETERS

Drain-source breakdown voltage

V (BR)DSS

VGS = 0V, ID =250µA

Zero gate voltage drain current

IDSS

VDS =24V,VGS = 0V

µA

Gate-body leakage current

IGSS

VGS =±20V, VDS = 0V

±100

Gate threshold voltage

VGS(th)

VDS =VGS, ID =250µA

VGS =10V, ID =8.5A

mΩ

Drain-source on-resistance (note 3)

RDS(on)

VGS =4.5V, ID =6A

mΩ

Forward tranconductance (note 3)

VDS =5V, ID =8.5A

Diode forward voltage (note 3)

VSD

IS=1A, VGS = 0V

DYNAMIC PARAMETERS (note 4)

Input capacitance

Ciss

1250

Output capacitance

Coss

180

Reverse transfer capacitance

Crss

VDS =15V,VGS =0V,f =1MHz

110

SWITCHING PARAMETERS (note 4)

Turn-on delay time

td(on)

7.5

Turn-on rise time

6.5

Turn-off delay time

td(off)

Turn-off fall time

VGS=10V,VDS=15V,

RL=1.8Ω,RGEN=3Ω

Total gate charge (10V)

Total gate charge (4.5V)

11.2

Gate-source charge

Qgs

2.6

Gate-drain charge

Qgd

VDS =15V,VGS =10V,ID =8.5A

4.2

Notes :

1. The value of RθJA is measure with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with

Ta=25

℃. The value in any given application depends on the user’s specific board design. The current rating is based on

the t≤10s thermal resistance rating.

2. Repetitive rating : Pulse width limited by junction temperature.

3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%.

4. Guaranteed by design, not subject to production testing.

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