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FTK4822D Arkusz danych(PDF) 1 Page - First Silicon Co., Ltd |
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FTK4822D Arkusz danych(HTML) 1 Page - First Silicon Co., Ltd |
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1 / 4 page ![]() 2013. 10. 22 1/4 SEMICONDUCTOR TECHNICAL DATA FTK4822D Revision No : 0 D-PAK (TO-252) DIM MILLIMETERS A B C D F H I J L 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 0 5 ± 0 1 0 50 ± 0 10 E 1 6 ± 0 2 O A C I J H F F L 1 2 3 1 GATE 2 DRAIN 3 SOURCE 0 95 MAX Q ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) N-Channel MOSFET DESCRIPTION The FTK4822D uses advanced trench te chnology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. VDS (V) = 30V ID = 36A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) FEATURES l o b m y S r e t e m a r a P Value Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current (t ≤10s I ) 1 e t o n ( ) D 36 A Pulsed Drain Current (note 2) IDM 144 A Power Dissipation @ TC = 25 C PD 42 W Thermal Resistance from Junction to Ambient (t ≤10s) (note 1) RθJA 50 ℃/W Junction Temperature TJ ℃ Storage Temperature TSTG -55~+150 ℃ Thermal Resistance, Junction-to-Case 3 RθJC ℃/W -55~+150 (note 2) |
Podobny numer części - FTK4822D |
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Podobny opis - FTK4822D |
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