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ADRF5740BCCZN-R7 Arkusz danych(PDF) 4 Page - Analog Devices

Numer części ADRF5740BCCZN-R7
Szczegółowy opis  2 dB LSB, 4-Bit, Silicon Digital Attenuator, 10 MHz to 60 GHz
PDF  13 Pages
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ADRF5740BCCZN-R7 Arkusz danych(HTML) 4 Page - Analog Devices

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ADRF5740
Data Sheet
Rev. 0 | Page 4 of 13
Parameter
Test Conditions/Comments
Min
Typ
Max
Unit
INPUT LINEARITY1
100 MHz to 50 GHz
0.1 dB Power Compression (P0.1dB)
25.5
dBm
1 dB Power Compression (P1dB)
26.5
dBm
Third-Order Intercept (IP3)
Two-tone input power = 12 dBm per tone,
Δf = 1 MHz, all attenuation states
45
dBm
DIGITAL CONTROL INPUTS
LE, D2, D3, D4, D5 pins
Voltage
Low (VINL)
0
0.8
V
High (VINH)
1.2
3.3
V
Current
Low (IINL)
−10
µA
High (IINH)
LE, D2, D3, D4, D5 pins
<1
µA
SUPPLY CURRENT
Positive Supply Current (IDD)
VDD pin
Bias Low
LE, D2, D3, D4, D5 = 0 V
52
µA
Bias High
LE, D2, D3, D4, D5 = 3.3 V
2
µA
Negative Supply Current (ISS)
VSS pin
−110
µA
RECOMMENDED OPERATING CONDITIONS
Supply Voltage
VDD
3.15
3.45
V
VSS
−3.45
−3.15
V
Digital Control Voltage
0
VDD
V
RF Power2
f = 100 MHz to 50 GHz, TCASE = 85°C,3 all
attenuation states
Input at ATTIN
Steady state, average
24
dBm
Steady state, peak
24
dBm
Hot switching, average
24
dBm
Hot switching, peak
24
dBm
Input at ATTOUT
Steady state, average
16
dBm
Steady state, peak
16
dBm
Hot switching, average
16
dBm
Hot switching, peak
16
dBm
TCASE
−40
+105
°C
1
Input linearity performance degrades over frequency (see Figure 21 and Figure 22).
2
For power derating over frequency, see Figure 2 and Figure 3. Power derating is applicable for all ATTIN and ATTOUT power specifications.
3
For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB.
TIMING SPECIFICATIONS
See Figure 24 for the timing diagram.
Table 2.
Parameter
Description
Min
Typ
Max
Unit
tLEW
Minimum LE pulse width
10
ns
tPH
Hold time
10
ns
tPS
Setup time
2
ns



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