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ADRF5740BCCZN-R7 Arkusz danych(PDF) 5 Page - Analog Devices

Numer części ADRF5740BCCZN-R7
Szczegółowy opis  2 dB LSB, 4-Bit, Silicon Digital Attenuator, 10 MHz to 60 GHz
PDF  13 Pages
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ADRF5740BCCZN-R7 Arkusz danych(HTML) 5 Page - Analog Devices

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Data Sheet
ADRF5740
Rev. 0 | Page 5 of 13
ABSOLUTE MAXIMUM RATINGS
Table 3.
Parameter
Rating
Positive Supply Voltage
−0.3 V to +3.6 V
Negative Supply Voltage
−3.6 V to +0.3 V
Digital Control Input Voltage
−0.3 V to VDD + 0.3 V
RF Power1 (f = 100 MHz to 50 GHz,
TCASE = 85°C2)
Input at ATTIN
Steady State, Average
25 dBm
Steady State, Peak
25 dBm
Hot Switching, Average
25 dBm
Hot Switching, Peak
25 dBm
Input at ATTOUT
Steady State, Average
17 dBm
Steady State, Peak
17 dBm
Hot Switching, Average
17 dBm
Hot Switching, Peak
17 dBm
RF Power Under Unbiased Condition1
(VDD, VSS = 0 V)
Input at ATTIN
18 dBm
Input at ATTOUT
10 dBm
Temperature
Junction (TJ)
135°C
Storage
−65°C to +150°C
Reflow
260°C
Continuous Power Dissipation (PDISS)
0.25 W
1
For power derating over frequency, see Figure 2 and Figure 3. Applicable for
all ATTIN and ATTOUT power specifications.
2
For 105°C operation, the power handling degrades from the TCASE = 85°C
specifications by 3 dB.
Stresses at or above those listed under Absolute Maximum
Ratings may cause permanent damage to the product. This is a
stress rating only; functional operation of the product at these
or any other conditions above those indicated in the operational
section of this specification is not implied. Operation beyond
the maximum operating conditions for extended periods may
affect product reliability.
ELECTROSTATIC DISCHARGE (ESD) RATINGS
The following ESD information is provided for handling of
ESD-sensitive devices in an ESD protected area only.
Human body model (HBM) per ESDA/JEDEC JS-001.
Field induced charged device model (FICDM) per ESDA/JEDEC
JS-002.
ESD Ratings for ADRF5740
Table 4. ADRF5740, 16-Terminal LGA
ESD Model
Withstand Threshold (V)
HBM
ATTIN and ATTOUT Pins
±250
Supply and Control Pins
±2000
FICDM
±1250
THERMAL RESISTANCE
Thermal performance is directly linked to PCB design and
operating environment. Careful attention to PCB thermal
design is required.
θJC is the junction to case bottom (channel to package bottom)
thermal resistance.
Table 5. Thermal Resistance
Package Type
θJC1
Unit
CC-16-6
200
°C/W
1
θJC was determined by simulation under the following conditions: the heat
transfer is due solely to thermal conduction from the channel through the
ground pad to the PCB. The ground pad is held constant at 85°C operating
temperature.
POWER DERATING CURVES
–16
–14
–12
–10
–8
–6
–4
–2
0
2
10k
1M
100M
10G
FREQUENCY (Hz)
ATTIN
ATTOUT
Figure 2. Power Derating vs. Frequency, Low Frequency Detail, TCASE = 85°C
–16
–14
–12
–10
–8
–6
–4
–2
0
2
FREQUENCY (GHz)
40
42
44
46
48
50
52
54
56
58
60
62
64
66
68
ATTIN
ATTOUT
Figure 3. Power Derating vs. Frequency, High Frequency Detail, TCASE = 85°C
ESD CAUTION



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