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AT25QL321 Arkusz danych(PDF) 68 Page - Dialog Semiconductor

Numer części AT25QL321
Szczegółowy opis  32-Mbit, 1.7V Minimum SPI Serial Flash Memory with Dual I/O, Quad I/O and QPI Support
PDF  79 Pages
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AT25QL321 Arkusz danych(HTML) 68 Page - Dialog Semiconductor

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67
AT25QL321
DS-25QL321–131C–5/2017
Notes:
1. Clock high + Clock low must be less than or equal to 1/fc.
2. Value guaranteed by design and/or characterization, not 100% tested in production.
3. Contains: Read Status Register-1,2/ Read Manufacturer/Device ID, Dual, Quad/ Read JEDEC ID/ Read Security Register/ Read Serial
Flash Discovery Parameter.
4. Only applicable as a constraint for a Write Status Register instruction when Sector Protect Bit is set to 1.
5. Commercial temperature only applies to Fast Read (FR). Industrial temperature applies to all other parameters.
Output Hold Time
tCLQX
tHO
1.5
ns
HOLD Active Setup Time relative to Clock
tHLCH
5
ns
HOLD Active Hold Time relative to Clock
tCHHH
5
ns
HOLD Not Active Setup Time relative to Clock
tHHCH
5
ns
HOLD Not Active Hold Time relative to Clock
tCHHL
5
ns
HOLD to Output Low-Z
tHHQX(2)
tLZ
7
ns
HOLD to Output High-Z
tHLQZ(2)
tHZ
12
ns
Write Protect Setup Time Before CS Low
tWHSL(4)
20
ns
Write Protect Setup Time After CS High
tSHWL(4)
100
ns
CS High to Power Down Mode
tDP(2)
3
µs
CS High to Standby Mode without Electronic
Signature Read
tRES1(2)
3
µs
CS High to Standby Mode with Electronic
Signature Read
tRES2(2)
1.8
µs
CS High to next Instruction after Suspend
tSUS(2)
30
µs
CS High to next Instruction after Reset
tRST(2)
30
µs
Write Status Register Time
tw
10
15
ms
Byte Program Time
tBP
10
150
µs
Page Program Time
tPP
0.6
5
ms
Page Program Time (ACC = 9V)
tEP
0.3
3
ms
Block Erase Time(4KB)
tSE
0.06
0.4
s
Block Erase Time(32KB)
tBE1
0.20
1.5
s
Block Erase Time(64KB)
tBE2
0.35
2
s
Chip Erase Time
tCE
20
80
s



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