QPD1015LEVB2 datasheet(6/27 Pages) QORVO

6 / 27 page

QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

Rev. C

- 6 of 27 -

Disclaimer: Subject to change without notice

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Thermal and Reliability Information - CW

Parameter

Conditions

Values

Units

Thermal Resistance (θJC)

85 °C Case

10.5 W Pdiss, CW

3.56

°C/W

Maximum Channel Temperature (TCH)

122

°C

Median Lifetime (TM)

1.4E11

Hrs

Thermal Resistance (θJC)

85 °C Case

21 W Pdiss, CW

3.86

°C/W

Maximum Channel Temperature (TCH)

166

°C

Median Lifetime (TM)

1.1E9

Hrs

Thermal Resistance (θJC)

85 °C Case

31.5 W Pdiss, CW

4.28

°C/W

Maximum Channel Temperature (TCH)

220

°C

Median Lifetime (TM)

8.3E6

Hrs

Thermal Resistance (θJC)

85 °C Case

42 W Pdiss, CW

4.75

°C/W

Maximum Channel Temperature (TCH)

285

°C

Median Lifetime (TM)

7.8E4

Hrs

100

120

140

160

180

200

220

240

260

280

300

320

340

360

380

400

0.0

10.0

20.0

30.0

40.0

50.0

60.0

CW Dissipation Power, W

Maximum Channel Temperature vs. CW Dissipation Power

Package Base at 85

°C

1E6 hours reliability temperature limit

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