QPD1015L

65W, 50V, DC – 3.7 GHz, GaN RF Transistor

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Disclaimer: Subject to change without notice

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www.qorvo.com

Parameter

Rating

Units

+145

V

-7 to +2

V

10.2

A

See pg. 7.

mA

40

W

RF Input Power, CW, 50 , T = 25 °C

+37

dBm

275

°C

Mounting Temperature (30 Seconds)

320

°C

Storage Temperature

−40 to +150

°C

Notes:

1.

. Operation of this device outside the parameter ranges given above may cause permanent damage.

Parameter

Min

Typ

Max

Units

Operating Temperature Range

−40

+25

+85

°C

+12

+50

+55

V

–

2.5

–

A

–

65

–

mA

–

−2.8

–

V

–

–

250

°C

–

–

36

W

–

–

64

W

Notes:

over all recommended operating conditions.