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QPD1015LEVB2 Arkusz danych(PDF) 11 Page - Qorvo, Inc |
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QPD1015LEVB2 Arkusz danych(HTML) 11 Page - Qorvo, Inc |
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11 / 27 page ![]() QPD1015L 65W, 50V, DC – 3.7 GHz, GaN RF Transistor Rev. C - 11 of 27 - Disclaimer: Subject to change without notice © 2016 Qorvo www.qorvo.com Load-Pull Smith Charts1, 2, 3 Notes: 1. 50 V, 65 mA, Pulsed signal with 128 uS pulse width and 10 % duty cycle. Performance is at indicated input power. 2. See page 17 for load-pull and source-pull reference planes. 11.7- Ω load-pull TRL fixtures are built with 32-mil RO4360G2 material. 3. NaN means the impedances are either undefined or varying in load-pull system. 3.5GHz, Load-pull 48.6 48.4 48.2 13.4 12.9 12.4 58.2 56.2 54.2 •••• Max Power is 48.7dBm at Z = 9.371-5.058iΩ Ω Ω Ω Γ Γ Γ Γ = -0.05-0.2521i •••• Max Gain is 13.8dB at Z = 4.61+1.38iΩ Ω Ω Ω Γ Γ Γ Γ = -0.4245+0.1205i •••• Max PAE is 59.4% at Z = 6.126-1.75iΩ Ω Ω Ω Γ Γ Γ Γ = -0.3002-0.1276i Zo = 11.7Ω Ω Ω Ω 3dB Compression Referenced to Peak Gain Zs(fo) = 5.7-13.68iΩ Ω Ω Ω Zs(2fo) = 6.46-2.35iΩ Ω Ω Ω Zs(3fo) = 20.91-4.52iΩ Ω Ω Ω Zl(2fo) = 0.72+3.23iΩ Ω Ω Ω Zl(3fo) = NaNΩ Ω Ω Ω Power Gain PAE |
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