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RA4M2 Arkusz danych(PDF) 36 Page - Renesas Technology Corp

Numer części RA4M2
Szczegółowy opis  Leading-performance 100 MHz Arm Cortex-M33 core, up to 512 KB code flash memory with background operation, 8 KB Data flash memory, and 128 KB SRAM with Parity/ECC.
PDF  92 Pages
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Producent  RENESAS [Renesas Technology Corp]
Strona internetowa  http://www.renesas.com
Logo RENESAS - Renesas Technology Corp

RA4M2 Arkusz danych(HTML) 36 Page - Renesas Technology Corp

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Sub-clock oscillator output
SOSCCR.SOSTP
Sub-clock
tSUBOSCWT
Figure 2.11
Sub-clock oscillation start timing
2.3.3
Reset Timing
Table 2.19
Reset timing
Parameter
Symbol Min Typ Max
Unit Test conditions
RES pulse width
Power-on
tRESWP 0.7 —
—
ms
Figure 2.12
Deep Software Standby mode
tRESWD 0.6 —
—
ms
Figure 2.13
Software Standby mode, Subosc-speed
mode
tRESWS 0.3 —
—
ms
All other
tRESW
200 —
—
µs
Wait time after RES cancellation
tRESWT —
37.3 41.2
µs
Figure 2.12
Wait time after internal reset cancellation
(IWDT reset, WDT reset, software reset, SRAM parity error reset, SRAM ECC error
reset, bus master MPU error reset, TrustZone error reset)
tRESW2 —
324 397.7 µs
—
VCC
RES
Internal reset signal
(low is valid)
tRESWP
tRESWT
VCCmin
Figure 2.12
RES pin input timing under the condition that VCC exceeds VPOR voltage threshold
RES
Internal reset signal
(low is valid)
tRESWD, tRESWS, tRESW
tRESWT
Figure 2.13
Reset input timing
RA4M2 Datasheet
2. Electrical Characteristics
R01DS0367EJ0110 Rev.1.10
Jan 27, 2021
Page 36 of 92



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