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PACDN009 Arkusz danych(PDF) 6 Page - California Micro Devices Corp |
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PACDN009 Arkusz danych(HTML) 6 Page - California Micro Devices Corp |
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6 / 8 page ![]() © 2004 California Micro Devices Corp. All rights reserved. 6 430 N. McCarthy Blvd., Milpitas, CA 95035-5112 ● Tel: 408.263.3214 ● Fax: 408.263.7846 ● www.calmicro.com 09/21/04 PACDN009 Application Information (cont’d) Implementation Examples ESD events are very high-speed pulses with rise times in the range of 1ns or less. To effectively use the PACDN009, the following design guidelines must be observed (as discussed in the application section): 1) The inductance from the VN and VP connections of the PACDN009 to ground must be very low. This includes the path through the VP decoupling capacitor to ground and the path to the power supply (as dis- cussed above). 2) The inductance between the connector pin to be protected and the PACDN009 channel input pin must be kept to a minimum. If there is a large inductance here, the ESD event will find a lower impedance path which will more likely be through the device to be pro- tected. Figure 2 shows the implementation schematic and Figure 3 shows a possible layout for the PACDN009. In figure 3, notice the large VCC and ground areas with multiple via connections to the underlying reference planes and the positioning of the bypass capacitor. Note how the signal lines to be pro- tected flow from the connector to the PACDN009 and then out to the device to be protected (Figure 3). This daisy chaining provides a low impedance path from the connector to the PACDN009 and a higher impedance path from the PACDN009 to the protected device. Figure 2. Typical ESD protection implementation ONE CHANNEL OF PAC DN009 GROUND RAIL POSITIVE SUPPLY RAIL SYSTEM OR CIRCUITRY BEING PROTECTED D1 2 D POWER SUPPLY OPTIONAL ZENER DIODE FOR EXTRA PROTECTION CHANNEL INPUT DECOUPLING CAPCITOR 0.22 µF LINE BEING PROTECTED |
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