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ADRF5162BCPZN-R7 Arkusz danych(PDF) 4 Page - Analog Devices |
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ADRF5162BCPZN-R7 Arkusz danych(HTML) 4 Page - Analog Devices |
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4 / 11 page ![]() Data Sheet ADRF5162 SPECIFICATIONS analog.com Rev. 0 | 4 of 11 Table 1. Electrical Specifications (Continued) Parameter Symbol Test Conditions/Comments Min Typ Max Unit Insertion Loss Path RF signal applied to the RFC or through connected RF1/RF2 Average 45.5 dBm Pulsed4 >100 ns pulse width, 15% duty cycle 48.5 dBm Peak ≤100 ns peak duration, 5% duty cycle 50 dBm Hot Switching RF signal applied to the RFC 43 dBm LTE Signal TCASE = 105°C Average 8.5 dB PAR, long-term (>10 years) 41.5 dBm Average 8.5 dB PAR, single event (<10sec) 42.5 dBm Case Temperature TCASE −40 +105 °C 1 For more details, see the Theory of Operation section. 2 For power derating over frequency, see Figure 2 and Figure 3. 3 For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB. 4 For different pulsed conditions, contact Applications Support. |
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