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ADRF5162BCPZN-R7 Arkusz danych(PDF) 4 Page - Analog Devices

Numer części ADRF5162BCPZN-R7
Szczegółowy opis  High Power, 100 W Peak, Silicon SPDT, Reflective Switch, 0.4 GHz to 8 GHz
PDF  11 Pages
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Strona internetowa  http://www.analog.com
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ADRF5162BCPZN-R7 Arkusz danych(HTML) 4 Page - Analog Devices

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Data Sheet
ADRF5162
SPECIFICATIONS
analog.com
Rev. 0 | 4 of 11
Table 1. Electrical Specifications (Continued)
Parameter
Symbol
Test Conditions/Comments
Min
Typ
Max
Unit
Insertion Loss Path
RF signal applied to the RFC or through connected
RF1/RF2
Average
45.5
dBm
Pulsed4
>100 ns pulse width, 15% duty cycle
48.5
dBm
Peak
≤100 ns peak duration, 5% duty cycle
50
dBm
Hot Switching
RF signal applied to the RFC
43
dBm
LTE Signal
TCASE = 105°C
Average
8.5 dB PAR, long-term (>10 years)
41.5
dBm
Average
8.5 dB PAR, single event (<10sec)
42.5
dBm
Case Temperature
TCASE
−40
+105
°C
1 For more details, see the Theory of Operation section.
2 For power derating over frequency, see Figure 2 and Figure 3.
3 For 105°C operation, the power handling degrades from the TCASE = 85°C specifications by 3 dB.
4 For different pulsed conditions, contact Applications Support.



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