ISO7421-EP

SLLSEN3 – DECEMBER 2015

www.ti.com

6 Specifications

6.1 Absolute Maximum Ratings

see

(1)

MIN

MAX

UNIT

VCC

Supply voltage(2), VCC1, VCC2

–0.5

6

V

VI

Voltage at IN, OUT

–0.5

VCC + 0.5

(3)

V

IO

Output current

–15

15

mA

TJ(max)

Maximum junction temperature

150

°C

Tstg

Storage temperature

–65

150

°C

(1)

Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings

only and functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating

Conditions is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

(2)

All voltage values except differential I/O bus voltages are with respect to network ground terminal and are peak voltage values.

(3)

Maximum voltage must not exceed 6 V.

6.2 ESD Ratings

VALUE

UNIT

Human body model (HBM), per ANSI/ESDA/JEDEC JS-001(1)

±4000

Field-induced charged-device model, JEDEC Standard 22, Test Method

±1500

V(ESD)

Electrostatic discharge

V

C101

Machine model, ANSI/ESDS5.2-1996

±200

(1)

JEDEC document JEP155 states that 500-V HBM allows safe manufacturing with a standard ESD control process.

6.3 Recommended Operating Conditions

MIN

NOM

MAX

UNIT

Supply voltage - 3.3-V operation

3

3.3

3.6

VCC1, VCC2

V

Supply voltage - 5-V operation

4.5

5

5.5

IOH

High-level output current

–4

mA

IOL

Low-level output current

4

mA

VIH

High-level input voltage

2

5.25

V

VIL

Low-level input voltage

0

0.8

V

1/tui

Signaling rate

0

1

Mbps

tui

Input pulse duration

1

us

TJ

(1)

Junction temperature

–55

136

°C

(1)

To maintain the recommended operating conditions for TJ, see the Thermal Information.

6.4 Thermal Information

ISO7421-EP

THERMAL METRIC(1)

D (SOIC)

UNIT

8 PINS

Low-K Board

212

RθJA

Junction-to-ambient thermal resistance

°C/W

High-K Board

116.6

RθJC(top)

Junction-to-case (top) thermal resistance

71.6

°C/W

RθJB

Junction-to-board thermal resistance

57.3

°C/W

ψJT

Junction-to-top characterization parameter

28.3

°C/W

ψJB

Junction-to-board characterization parameter

56.8

°C/W

(1)

For more information about traditional and new thermal metrics, see the Semiconductor and IC Package Thermal Metrics application

report, SPRA953.

4

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