IS25LE512M-RMLA3:P-TY datasheet(83/189 Pages) ISSI

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IS25LE512M-RMLA3:P-TY Arkusz danych(PDF) 83 Page - Integrated Silicon Solution, Inc

Numer części	IS25LE512M-RMLA3:P-TY

Szczegółowy opis	SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC

PDF	189 Pages

Scroll/Zoom	100%

Producent	ISSI [Integrated Silicon Solution, Inc]

Strona internetowa	http://www.issi.com

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83 / 189 page

IS25LE512M

IS25WE512M

Integrated Silicon Solution, Inc.- www.issi.com

Rev. A6

06/16/2025

Figure 8.20 Fast Read Quad I/O Sequence In QPI Mode (EBh [EXTADD=1] or ECh, 4-byte address)

EBh/ECh

CE#

IO[3:0]

6 Dummy Cycles

4-byte Address

...

Mode 3

Mode 0

31:28

7:4

3:0

7:4

3:0

Data 1

27:24 23:20 18:16 15:12 11:8

...

Instruction

Mode Bits

7:4

3:0

SCK

Notes:

If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode

bits are different from AXh, the device exits the AX read operation.

2. Number of dummy cycles depends on Read Parameter setting. Detailed information in Table 6.11 Read Dummy

Cycles.

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