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IS25LE512M-RMLA3:P-TY Arkusz danych(PDF) 68 Page - Integrated Silicon Solution, Inc

Numer części IS25LE512M-RMLA3:P-TY
Szczegółowy opis  SERIAL FLASH MEMORY 133/112MHZ MULTI I/O SPI & QUAD I/O QPI DTR INTERFACE WITH ON-CHIP ECC
PDF  189 Pages
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Producent  ISSI [Integrated Silicon Solution, Inc]
Strona internetowa  http://www.issi.com
Logo ISSI - Integrated Silicon Solution, Inc

IS25LE512M-RMLA3:P-TY Arkusz danych(HTML) 68 Page - Integrated Silicon Solution, Inc

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IS25LE512M
IS25WE512M
Integrated Silicon Solution, Inc.- www.issi.com
68
Rev. A6
06/16/2025
Figure 8.7 Fast Read Dual I/O Sequence (BBh [EXTADD=0], 3-byte address)
7
5
3
7
5
1
3
1
Data Out 1
Instruction = BBh
22
CE #
SCK
2
0
6
4
3-byte Address
High Impedance
20
18
...
0
1
2
3
4
5
6
7
8
9
10
...
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
Mode 3
Mode 0
...
tV
23
3
1
7
5
21
19
...
IO0
IO1
3
1
2
0
6
4
2
6
4
0
2
0
4 Dummy Cycles
7
5
3
1
6
4
2
0
7
5
...
6
4
...
CE #
SCK
IO0
IO1
Data Out 2
Data Out 3
Mode Bits
Mode Bits
Notes:
1.
If the mode bits=AXh (where X is don’t care), it can execute the AX read mode (without command). When the mode
bits are different from AXh, the device exits the AX read operation.
2. Number of dummy cycles depends on clock speed. Detailed information in Table 6.11 Read Dummy Cycles.
3. Sufficient dummy cycles are required to avoid I/O contention. If the number of dummy cycles and AX bits cycles
are same, then X should be Hi-Z.



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