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MASW4060G Arkusz danych(PDF) 1 Page - M/A-COM Technology Solutions, Inc.

Numer części MASW4060G
Szczegółowy opis  GaAs SP4T Switch DC - 4.0 GHz
PDF  3 Pages
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Producent  MA-COM [M/A-COM Technology Solutions, Inc.]
Strona internetowa  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW4060G Arkusz danych(HTML) 1 Page - M/A-COM Technology Solutions, Inc.

  MASW4060G Datasheet HTML 1Page - M/A-COM Technology Solutions, Inc. MASW4060G Datasheet HTML 2Page - M/A-COM Technology Solutions, Inc. MASW4060G Datasheet HTML 3Page - M/A-COM Technology Solutions, Inc.  
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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
1
GaAs SP4T Switch
DC - 4.0 GHz
Rev. V4
MASW4060G
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Features
• Low Insertion Loss, 1.2 dB Typical
• Fast Switching Speed, 4 nS Typical
• Ultra Low DC Power Consumption
• Terminated Option
• RoHS* Compliant
Description
M/A-COM’s MASW4060G is an SPDT absorptive or
reflective GaAs MESFET MMIC. This part combines
small
size,
low
insertion
loss
and
power
consumption with high isolation. Ideal for many
applications and module use. It will function well for
designs below 4.0 GHz.
The MASW4060G is fabricated using a mature 1-
micron gate length GaAs MESFET process. The
process features full chip passivation for increased
performance and reliability.
Bond Pad Dimensions
Pad Layout
Parameter
Absolute Maximum
Control Value (A or B)
-8.5 Vdc
Storage Temperature
-65°C to +175°C
Max Operating Temperature
+175°C
Max Input RF Power
+34 dBm
2. Exceeding any one or combination of these limits may cause
permanent damage to this device.
3. M/A-COM does not recommend sustained operation near
these survivability limits.
RF
0.005 x 0.005 (0.125 x 0.125)
RF1, RF2, RF3, RF4
0.004 x 0.004 (0.100 x 0.100)
A1, A2, A3, A4
0.004 x 0.004 (0.100 x 0.100)
B1, B2, B3, B4
0.004 x 0.004 (0.100 x 0.100)
Bond Pad
Dimensions - Inches (mm)
G1, G2, G3, G4 4
0.008 x 0.004 (0.200 x 0.100)
T1, T2, T3, T4 5
0.006 x 0.005 (0.150 x 0.125)
Die Size - Inches (mm)
0.076 x 0.058 x 0.010 (1.920 x 1.470 x 0.25)
4. “G” pads designate internal grounds necessary to maintain
data sheet isolation. These are not DC blocked and would
need to be blocked if positive control voltage is required.
5. “T” pads denote a 50 Ω termination path connected to each
RFx port. If bonded to ground, it will cause the related port to
be absorptive, or matched, in the isolated condition. As de-
scribed in note 4, these pads are also not DC blocked.
Ordering Information
Part Number
Package
MASW4060G
DIE 1
1. Die quantity varies.
Schematic
* Restrictions on Hazardous Substances, European Union
Directive 2002/95/EC.
Absolute Maximum Rating
2,3


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