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MASW4060G Arkusz danych(PDF) 2 Page - M/A-COM Technology Solutions, Inc.

Numer części MASW4060G
Szczegółowy opis  GaAs SP4T Switch DC - 4.0 GHz
PDF  3 Pages
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Producent  MA-COM [M/A-COM Technology Solutions, Inc.]
Strona internetowa  http://www.macomtech.com
Logo MA-COM - M/A-COM Technology Solutions, Inc.

MASW4060G Arkusz danych(HTML) 2 Page - M/A-COM Technology Solutions, Inc.

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• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make
changes to the product(s) or information contained herein without notice.
2
GaAs SP4T Switch
DC - 4.0 GHz
Rev. V4
MASW4060G
ADVANCED:
Data Sheets contain information regarding a product M/A-COM Technology Solutions
is considering for development. Performance is based on target specifications, simulated results,
and/or prototype measurements. Commitment to develop is not guaranteed.
PRELIMINARY:
Data Sheets contain information regarding a product M/A-COM Technology
Solutions has under development. Performance is based on engineering tests. Specifications are
typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.
Commitment to produce in volume is not guaranteed.
Electrical Specifications: 0/-5 Vdc, 50
Ω, -55°C to +85°C 6
Parameter
Test Conditions
Units
Min.
Typ.
Max.
Insertion Loss
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
dB
dB
dB
dB
1.3
1.3
1.3
1.7
Isolation
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
dB
dB
dB
dB
50
45
40
30
VSWR
DC - 0.5 GHz
DC - 1.0 GHz
DC - 2.0 GHz
DC - 4.0 GHz
Ratio
Ratio
Ratio
Ratio
1.4:1
1.4:1
1.5:1
2.0:1
Input P-1dB
0.5 GHz
0.5 - 4.0 GHz
dBm
dBm
+17
+27
IP2
Two Tone Input Power up to +5 dBm
0.5 GHz
0.5 - 4.0 GHz
dBm
dBm
+45
+60
IP3
Two Tone Input Power up to +5 dBm
0.5 GHz
0.5 - 4.0 GHz
dBm
dBm
+35
+46
Control Current
VIN Low (0 to –0.2 V)
VOUT High (-5 V)
µA
µA
50
25
200
T-rise, T-fall
10% to 90% RF and 90% to 10% RF
nS
2
TON, TOFF
50% control to 90% RF, and 50% control to 10% RF
nS
4
Transients
In Band
mV
20
Truth Table
7
A1 B1 A2 B2 A3 B3 A4 B4
ANT-
RF1
ANT-
RF2
ANT-
RF3
ANT-
RF4
1
0
0
1
0
1
0
1
On
Off
Off
Off
0
1
1
0
0
1
0
1
Off
On
Off
Off
0
1
0
1
1
0
0
1
Off
Off
On
Off
0
1
0
1
0
1
1
0
Off
Off
Off
On
7. 0 = 0 V to –0.2 V, 1 = -5 V.
Handling Procedures
Please observe the following precautions to avoid
damage:
Static Sensitivity
Gallium Arsenide Integrated Circuits are sensitive
to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control
techniques should be used when handling these
devices.
6. Loss changes ±0.0025 dB/°C. (From -55°C to +85°C)
Wire Bonding
A. Ball or wedge with 1.0 mil diameter pure gold
wire. Thermosonic wirebonding with a nominal
stage temperature of 150°C and a ball bonding
force of 40 to 50 grams or wedge bonding force
of 18 to 22 grams is recommended. Ultrasonic
energy and time should be adjusted to the
minimum levels achieve reliable wirebonds.
B. Wirebonds should be started on the chip and
terminated on the package.
GND bonds
should be as short as possible; at least three
and no more than four bond wires from ground
pads to package are recommended.



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