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SST25WF080 Arkusz danych(PDF) 16 Page - Silicon Storage Technology, Inc |
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SST25WF080 Arkusz danych(HTML) 16 Page - Silicon Storage Technology, Inc |
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16 / 29 page ![]() 16 Advance Information 8Mbit 1.8V SPI Serial Flash SST25WF080 ©2010 Silicon Storage Technology, Inc. S71203-03-000 04/10 Read-Status-Register (RDSR) The Read-Status-Register (RDSR) instruction, 05H, allows reading of the status register. The status register may be read at any time even during a Write (Program/Erase) operation. When a Write operation is in progress, the Busy bit may be checked before sending any new commands to assure that the new commands are properly received by the device. CE# must be driven low before the RDSR instruction is entered and remain low until the status data is read. Read-Status-Register is continuous with ongoing clock cycles until it is terminated by a low to high transition of the CE#. See Figure 18 for the RDSR instruction sequence. FIGURE 18: Read-Status-Register (RDSR) Sequence Write-Enable (WREN) The Write-Enable (WREN) instruction, 06H, sets the Write- Enable-Latch bit in the Status Register to 1 allowing Write operations to occur. The WREN instruction must be exe- cuted prior to any Write (Program/Erase) operation. The WREN instruction may also be used to allow execution of the Write-Status-Register (WRSR) instruction; however, the Write-Enable-Latch bit in the Status Register will be cleared upon the rising edge CE# of the WRSR instruction. CE# must be driven high before the WREN instruction is executed. See Figure 19 for the WREN instruction sequence. FIGURE 19: Write Enable (WREN) Sequence 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 1203 F17.0 MODE 3 SCK SI SO CE# Bit 7 Bit 6 Bit 5 Bit 4 Bit 3 Bit 2 Bit 1 Bit 0 05 MODE 0 HIGH IMPEDANCE Status Register Out MSB MSB CE# SO SI SCK 01 2 3 4 5 6 7 06 HIGH IMPEDANCE MODE 0 MODE 3 1203 F18.0 MSB |
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