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BSM181F Arkusz danych(PDF) 2 Page - Siemens Semiconductor Group |
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BSM181F Arkusz danych(HTML) 2 Page - Siemens Semiconductor Group |
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2 / 7 page ![]() Semiconductor Group 65 BSM 181 F Electrical Characteristics at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V GS = 0, ID = 0.25 mA V (BR)DSS 800 – – V Gate threshold voltage V GS = VDS, ID = 1 mA V GS(th) 2.1 3.0 4.0 Zero gate voltage drain current V DS = 800 V, VGS = 0 T j = 25 ˚C T j = 125 ˚C I DSS – – 20 300 250 1000 µA Gate-source leakage current V GS = 20 V, VDS = 0 I GSS – 10 100 nA Drain-source on-state resistance V GS = 10 V, ID = 21 A R DS(on) – 0.25 0.32 Ω Dynamic Characteristics Forward transconductance V DS ≥ 2 × ID × RDS(on)max., ID = 21 A g fs 15 35 – S Input capacitance V GS = 0, VDS = 25 V, f = 1 MHz C iiss –22 30 nF Output capacitance V GS = 0, VDS = 25 V, f = 1 MHz C oss – 1 1.5 Reverse transfer capacitance V GS = 0, VDS = 25 V, f = 1 MHz C rss – 0.48 0.8 Turn-on time t on (ton = td (on) + tr) V CC = 400 V, VGS = 10 V I D = 21 A, RGS = 3.3 Ω t d (on) –60 – ns t r –90 – Turn-off time t off (toff = td (off) + tf) V CC = 400 V, VGS = 10 V I D = 21 A, RGS = 3.3 Ω t d (off) – 350 – t f –70 – |
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