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BSM181F Arkusz danych(PDF) 3 Page - Siemens Semiconductor Group |
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BSM181F Arkusz danych(HTML) 3 Page - Siemens Semiconductor Group |
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3 / 7 page ![]() Semiconductor Group 66 Electrical Characteristics (cont’d) at T j = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. Fast-recovery reverse diode Continuous reverse drain current T C = 25 ˚C I S ––34 A Pulsed reverse drain current T C = 25 ˚C I SM – – 136 Diode forward on-voltage I F = 68 A , VGS = 0 V SD – 1.6 2 V Reverse recovery time I F = IS, diF/dt = 100 A/ µs, VR = 100 V t rr 300 – ns Reverse recovery charge I F = IS, diF/dt = 100 A/ µs, VR = 100 V T j = 25 ˚C T j = 150 ˚C Q rr – – 3 16 – – µC BSM 181 F |
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