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BSM181F Arkusz danych(PDF) 4 Page - Siemens Semiconductor Group |
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BSM181F Arkusz danych(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 7 page ![]() Semiconductor Group 67 Characteristics at T j = 25 ˚C, unless otherwise specified. Power dissipation P tot = f (TC) parameter: T j = 150 ˚C Safe operating area I D = f (VDS) parameter: single pulse, T C = 25 ˚C, T j ≤ 150 ˚C Typ. output characteristics I D = f (VDS) parameter: t p = 80 µs Typ. transfer characteristic I D = f (VGS) parameter: t p = 80 µs , VDS = 25 V BSM 181 F |
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