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BUZ21 Arkusz danych(PDF) 6 Page - Siemens Semiconductor Group

Numer części BUZ21
Szczegółowy opis  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
PDF  8 Pages
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ21 Arkusz danych(HTML) 6 Page - Siemens Semiconductor Group

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Semiconductor Group
6
01/97
BUZ 21
Typ. output characteristics
ID = ƒ(VDS)
parameter:
t
p = 80 µs
0
1
2
3
4
5
6
7
V
9
V
DS
0
5
10
15
20
25
30
35
40
A
50
I
D
V
GS
[V]
a
a
4.0
b
b
4.5
c
c
5.0
d
d
5.5
e
e
6.0
f
f
6.5
g
g
7.0
h
h
7.5
i
i
8.0
j
j
9.0
k
k
10.0
l
Ptot = 75W
l
20.0
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter:
t
p = 80 µs, Tj = 25 °C
0
5
10
15
20
25
30
35
A
45
I
D
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.26
R
DS (on)
VGS [V] =
a
4.0
VGS [V] =
a
4.5
VGS [V] =
a
a
5.0
b
b
5.5
c
c
6.0
d
d
6.5
e
e
7.0
f
f
7.5
g
g
8.0
h
h
9.0
i
i
10.0
j
j
20.0
Typ. transfer characteristics
ID = f (VGS)
parameter:
tp = 80 µs
VDS≥2 x ID x RDS(on)max
0
1
2
3
4
5
6
7
8
V
10
V
GS
0
5
10
15
20
25
30
35
40
45
50
A
60
I
D
Typ. forward transconductance
gfs = f (ID)
parameter:
tp = 80 µs,
VDS≥2 x ID x RDS(on)max
0
10
20
30
40
A
55
I
D
0
2
4
6
8
10
12
14
16
S
20
g
fs



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