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BUZ21 Arkusz danych(PDF) 7 Page - Siemens Semiconductor Group

Numer części BUZ21
Szczegółowy opis  SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
PDF  8 Pages
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Producent  SIEMENS [Siemens Semiconductor Group]
Strona internetowa  http://www.siemens.com/
Logo SIEMENS - Siemens Semiconductor Group

BUZ21 Arkusz danych(HTML) 7 Page - Siemens Semiconductor Group

  BUZ21 Datasheet HTML 1Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 2Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 3Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 4Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 5Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 6Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 7Page - Siemens Semiconductor Group BUZ21 Datasheet HTML 8Page - Siemens Semiconductor Group  
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7
01/97
Semiconductor Group
BUZ 21
Gate threshold voltage
VGS (th) = ƒ(Tj)
parameter:
V
GS = VDS, ID = 1 mA
0.0
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
3.6
4.0
V
4.6
V
GS(th)
-60
-20
20
60
100
°C
160
T
j
2%
typ
98%
Drain-source on-resistance
RDS (on) = ƒ(Tj)
parameter:
ID = 13 A, VGS = 10 V
-60
-20
20
60
100
°C
160
T
j
0.00
0.02
0.04
0.06
0.08
0.10
0.12
0.14
0.16
0.18
0.20
0.22
0.24
Ω
0.28
R
DS (on)
typ
98%
Typ. capacitances
C = f (VDS)
parameter:
VGS = 0V, f = 1MHz
0
5
10
15
20
25
30
V
40
V
DS
-2
10
-1
10
0
10
1
10
nF
C
C
rss
C
oss
C
iss
Forward characteristics of reverse diode
IF = ƒ(VSD)
parameter:
Tj, tp = 80 µs
-1
10
0
10
1
10
2
10
A
I
F
0.0
0.4
0.8
1.2
1.6
2.0
2.4
V
3.0
V
SD
T
j = 25 °C typ
T
j = 25 °C (98%)
T
j = 150 °C typ
T
j = 150 °C (98%)



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