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BUZ21 Arkusz danych(PDF) 4 Page - Siemens Semiconductor Group |
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BUZ21 Arkusz danych(HTML) 4 Page - Siemens Semiconductor Group |
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4 / 8 page ![]() Semiconductor Group 4 01/97 BUZ 21 Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Reverse Diode Inverse diode continuous forward current TC = 25 °C IS - - 21 A Inverse diode direct current,pulsed TC = 25 °C ISM - - 84 Inverse diode forward voltage VGS = 0 V, IF = 42 A VSD - 1.3 1.7 V Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/µs trr - 150 - ns Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/µs Qrr - 0.48 - µC |
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