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ADP3203 Arkusz danych(PDF) 2 Page - Analog Devices |
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ADP3203 Arkusz danych(HTML) 2 Page - Analog Devices |
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2 / 12 page ![]() REV. PrD –2– PRELIMINARY TECHNICAL DATA ADP3203–SPECIFICATIONS 1 Parameter Symbol Conditions Min Typ Max Units SUPPLY-UVLO-SHUTDOWN Normal Supply Current I CC 715 mA UVLO Supply Current I CCUVLO 425 µA Shutdown Supply Current I CCSD SD = L, 3.0 V ≤≤≤≤≤ VCC ≤≤≤≤≤ 3.6 V 10 µA UVLO Threshold SD = H V CCH V CC ramping up, VSS= 0 V 2.9 V V CCL V CC ramping down, 2.65 V V SS floating UVLO Hysteresis V CCHYS 50 mV Shutdown Threshold (CMOS Input) V SDTH V CC/2 V POWERGOOD-CORE FEEDBACK Core Feedback Threshold Voltage V COREFBH 0.9 V < V DAC < 1.675 V V COREFB ramping up 1.12 V DAC 1.14 V DAC V V COREFB ramping down 1.10 V DAC 1.12 V DAC V V COREFB ramping up 0.88 V DAC 0.90 V DAC V V COREFB ramping down 0.86 V DAC 0.88 V DAC V Power Good Output Voltage V PWRGD V COREFB = VDACOUT 0.95 V CC V CC V (open drain output) V COREFB = 0.8 VDACOUT 0 0.8 V Masking Time 2 t PWRGD,MSK 6 V CC = 3.3 V 100 µs SOFT-START/HICCUP TIMER Charge/Discharge Current I SS V SS = 0 V –16 µA V SS = 0.5 V 0.5 µA Soft-Start Enable/Hiccup V REG = 1.25 V, Termination Threshold V RAMP = VCOREFB = 1.27 V V SSENDWN V SS ramping down 80 200 mV V SSENUP 7 V SS ramping up 150 mV Soft-Start Termination/Hiccup V SSTERM V RAMP = VCOREFB = 1.27 V Enable Threshold V SS ramping up 1.75 2.00 2.25 V VID DAC VID Input Threshold (CMOS Inputs) V VID0..4 V CC/2 V VID Input Current I VID0..4 VID 0..4 = L 90 µA (Internal Active Pull-up) Output Voltage V DAC See VID Code Table 1 0.600 1.750 V Accuracy ∆V DAC/VDAC 0.850 V < V DAC < 1.750 V –1.0 +1.0 % 0.600 V < V DAC < 0.825 V –8.5 +8.5 mV Settling Time 2 t DACS 3 ∆V DAC = 0.5 V, CDAC = 10 nF 3.5 µs Notes: 1 All limits at temperature extremes are guaranteed via correlation using standard Statistical Quality Control (SQC) methods. 2 Guaranteed by characterization. 3 Measured from 50% of VID code transition amplitude to the point where V DACOUT settles within ±1% of its steady state value. 4 40 mV PP amplitude impulse with 20 mV overdrive. Measured from the input threshold intercept point to 50% of the output voltage swing. 5 Measured between the 30% and 70% points of the output voltage swing. 6 Two test conditions: 1)PWRGD is OK but forced to fail by applying an out-of-the-CoreGood-window voltage (V COREFB,BAD = 1.0 V at VVID = 1.25 V setting) to the COREFB pin right after the moment that BOM or DPRSLP is asserted/de-asserted. PWRGD should not fail immediately only with the specified blanking delay time. 2) PWRGD is forced to fail (V COREFB,BAD = 1.0 V at VVID = 1.25 V setting) but gets into the CoreGood-window (V COREFB,GOOD = 1.25 V) right after the moment that BOM or DPRSLP is asserted/de-asserted. PWRGD should not go high immediately only with the specified blanking delay time. 7Guaranteed by design. ( T A ===== 25 °C, High (H) = VCC, Low (L) = 0 V, VCC = 3.3 V, SD = H, V COREFB = V DAC ( ≡ V DACOUT), VREG = VCS– = VVID = 1.25 V, ROUT = 100 k Ω Ω Ω Ω Ω, C OUT = 10 pF, C SS = 47 nF, RPWRGD = 680 Ω Ω Ω Ω Ω to 1.2 V, R CLAMP = 5.1 k Ω Ω Ω Ω Ω to VCC, HYSSET, BSHIFT, DSHIFT are open, BOM = H, DSLP = H, DPRSLP = L, unless otherwise noted) Current sunk by a pin has a positive sign, sourced by a pin has a negative sign. Negative sign is disregarded for min and max values. |
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