STM32F107VB datasheet(50/103 Pages) STMICROELECTRONICS

50 / 103 page

Electrical characteristics

STM32F105xx, STM32F107xx

50/104

Doc ID 15274 Rev 6

5.3.7

Internal clock source characteristics

The parameters given in Table 24 are derived from tests performed under ambient

temperature and VDD supply voltage conditions summarized in Table 9.

High-speed internal (HSI) RC oscillator

Low-speed internal (LSI) RC oscillator

Wakeup time from low-power mode

The wakeup times given in Table 26 is measured on a wakeup phase with a 8-MHz HSI RC

oscillator. The clock source used to wake up the device depends from the current operating

mode:

●

Stop or Standby mode: the clock source is the RC oscillator

●

Sleep mode: the clock source is the clock that was set before entering Sleep mode.

Table 24.

HSI oscillator characteristics (1)

VDD = 3.3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

fHSI

Frequency

MHz

DuCy(HSI) Duty cycle

ACCHSI

Accuracy of the HSI

oscillator

User-trimmed with the RCC_CR

Refer to application note AN2868 “STM32F10xxx internal RC oscillator (HSI) calibration” available from the

ST website www.st.com.

1(3)

Guaranteed by design, not tested in production.

Factory-

calibrated(4)

Based on characterization, not tested in production.

TA = –40 to 105 °C

–2

2.5

TA = –10 to 85 °C

–1.5

2.2

TA = 0 to 70 °C

–1.3

TA = 25 °C

–1.1

1.8

tsu(HSI)

(4)

HSI oscillator

startup time

µs

IDD(HSI)

(4)

HSI oscillator

power consumption

100

µA

Table 25.

LSI oscillator characteristics (1)

VDD = 3 V, TA = –40 to 105 °C unless otherwise specified.

Symbol

Parameter

Min

Typ

Max

Unit

fLSI

(2)

Based on characterization, not tested in production.

Frequency

kHz

tsu(LSI)

(3)

Guaranteed by design, not tested in production.

LSI oscillator startup time

µs

IDD(LSI)

(3)

LSI oscillator power consumption

0.65

1.2

µA

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