AN3307 datasheet(35/37 Pages) STMICROELECTRONICS

Numer części	AN3307

Szczegółowy opis	Guidelines for obtaining IEC 60335 Class B certification for any STM32 application

PDF	37 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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35 / 37 page

AN3307

Class B solution structure

Doc ID 18186 Rev 4

35/37

Figure 21.

Fault coupling principle used at partial RAM runtime self-test

Note:

Scrambling of physical addresses is respected in both ascending and descending tests, if

applicable.

Note:

Steps 2 and 3 are skipped when the March X algorithm is used.

D0'

D1'

D2'

D3’

D4'

D5'

D4*

D3*

D4*

D3*

D1*

D2*

D5*

Step n

Step n+1

Step n 1

Tested area

Overlap

Storage buffer

D0*

D4*

D3*

D0'

D1'

D2'

D3’

D4'

D5'

D0*

D4*

D3*

D0'

D1'

D2'

D3’

D4'

D5'

Phase I - STORE

Phase III - RESTORE

Ascending Test

Descending Test

…..

D0*

D0'

D1'

D2'

D4'

D5'

D0'

D1'

D2'

D’3’

D4'

D5'

MS18904V1

TEST TEST*

TEST

TEST*

TEST

Phase II - Test

D3’

Table 4.

March C- phases in RAM partial test

March phase

Partial bytes test over the block

Address order

Initial

Write 0x00 pattern

Increasing

Test 0x00 pattern, write 0xFF pattern

Increasing

Test 0xFF pattern, write 0x00 pattern

Increasing

Test 0x00 pattern, write 0xFF pattern

Decreasing

Test 0xFF pattern, write 0x00 pattern

Decreasing

Test 0x00 pattern

Decreasing

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