ATP613 datasheet(2/7 Pages) ONSEMI

2 / 7 page

ATP613

No. A1903-2/7

Electrical Characteristics at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

min

typ

max

Drain-to-Source Breakdown Voltage

V(BR)DSS

ID=10mA, VGS=0V

500

Zero-Gate Voltage Drain Current

IDSS

VDS=400V, VGS=0V

100

μA

Gate-to-Source Leakage Current

IGSS

VGS=±30V, VDS=0V

±100

Cutoff Voltage

VGS(off)

VDS=10V, ID=1mA

Forward Transfer Admittance

| yfs |

VDS=10V, ID=2.75A

1.5

2.9

Static Drain-to-Source On-State Resistance

RDS(on)

ID=2.75A, VGS=10V

1.55

2.0

Input Capacitance

Ciss

VDS=30V, f=1MHz

350

Output Capacitance

Coss

Reverse Transfer Capacitance

Crss

Turn-ON Delay Time

td(on)

See Fig.2

14.2

Rise Time

Turn-OFF Delay Time

td(off)

37.6

Fall Time

20.4

Total Gate Charge

VDS=200V, VGS=10V, ID=5.5A

13.8

Gate-to-Source Charge

Qgs

3.2

Gate-to-Drain “Miller” Charge

Qgd

7.6

Diode Forward Voltage

VSD

IS=5.5A, VGS=0V

1.1

1.5

Reverse Recovery Time

trr

See Fig.3

IS=5.5A, VGS=0V, di/dt=100A/μs

Reverse Recovery Charge

Qrr

120

Fig.1 Unclamped Inductive Switching Test Circuit

Fig.2 Switching Time Test Circuit

Fig.3 Reverse Recovery Time Test Circuit

Ordering Information

Device

Package

Shipping

memo

ATP613-TL-H

ATPAK

3,000pcs./reel

Pb Free and Halogen Free

50Ω

≥50Ω

VDD

10V

ATP613

P.G

50Ω

ID=2.75A

RL=71Ω

VDD=200V

VOUT

ATP613

VIN

PW≤10μs

D.C.≤1%

10V

VIN

VDD=50V

ATP613

500μH

Driver MOSFET

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