D2612 TKIM TC-00002855/D1510QB TKIM TC-00002545 No. A1903-1/7

http://onsemi.com

Semiconductor Components Industries, LLC, 2013

July, 2013

ATP613

N-Channel Power MOSFET

Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating

Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.

1 : Gate

2 : Drain

3 : Source

4 : Drain

ATPAK

0.4

0.55

13

2

6.5

0.6

4

0.8

1.5

0.4

2.6

4.6

0.4

2.3

2.3

ATP613-TL-H

Features

•

Reverse recovery time trr=60ns(typ.)

•

ON-resistance RDS(on)=1.55Ω(typ.)

•

Input Capacitance Ciss=350pF(typ.)

•

10V drive

•

Halogen free compliance

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter

Symbol

Conditions

Ratings

Unit

Drain-to-Source Voltage

VDSS

500

V

Gate-to-Source Voltage

VGSS

±30

V

Drain Current (DC)

ID

5.5

A

Drain Current (Pulse)

IDP

PW≤10μs, duty cycle≤1%

19

A

Source-to-Drain Diode Forward Current (DC)

IS

5.5

A

Source-to-Drain Diode Forward Current (Pulse)

ISP

PW≤10μs, duty cycle≤1%

19

A

Allowable Power Dissipation

PD

Tc=25°C70

W

Channel Temperature

Tch

150

°C

Storage Temperature

Tstg

--55 to +150

°C

Avalanche Energy (Single Pulse) *1

EAS

93

mJ

Avalanche Current *2

IAV

5.5

A

Note :

*1 VDD=99V, L=5mH, IAV=5.5A (Fig.1)

*2 L≤5mH, Single pulse

Package Dimensions

unit : mm (typ)

7057-001

Ordering number : ENA1903A

Product & Package Information

• Package

: ATPAK

• JEITA, JEDEC

: -

• Minimum Packing Quantity : 3,000 pcs./reel

Packing Type: TL

Marking

Electrical Connection

TL

ATP613

LOT No.

1

3

2,4