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ATP613 Arkusz danych(PDF) 4 Page - ON Semiconductor |
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ATP613 Arkusz danych(HTML) 4 Page - ON Semiconductor |
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4 / 7 page ![]() ATP613 No. A1903-4/7 EAS -- Ta Ambient Temperature, Ta -- °C 0 0 25 50 75 100 125 150 100 80 60 20 40 120 175 IT16212 PD -- Tc Case Temperature, Tc -- °C A S O Drain-to-Source Voltage, VDS -- V VGS -- Qg Total Gate Charge, Qg -- nC IT16211 0 0 20 40 60 80 100 140 120 60 50 40 20 30 10 80 70 160 IT16209 0 0 1 2 3 4 5 6 7 8 16 14 12 10 24 8 6 10 9 VDS=200V ID=5.5A IT16935 0.01 0.1 2 3 5 7 2 3 5 7 2 3 5 10 2 3 5 7 1.0 1.0 ID=5.5A 100 μs 1ms 10ms 100ms DC operation Operation in this area is limited by RDS(on). 10 23 5 7 2 100 35 7 2 3 7 5 10 μs IDP=19A (PW≤10μs) Tc=25 °C Single pulse |
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