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FAN53541 Arkusz danych(PDF) 5 Page - Fairchild Semiconductor |
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FAN53541 Arkusz danych(HTML) 5 Page - Fairchild Semiconductor |
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5 / 15 page ![]() © 2013 Fairchild Semiconductor Corporation www.fairchildsemi.com FAN53541 • Rev. 1.0.2 5 Electrical Characteristics Minimum and maximum values are at VIN=2.7 V to 5.5 V, and TA=-40°C to +85°C, unless otherwise noted. Typical values are at TA=25°C, VIN=5 V, and VOUT=1.2 V. Symbol Parameter Condition Min. Typ. Max. Unit Power Supplies IQ Quiescent Current ILOAD=0, MODE=0 (AUTO PFM/PWM) 50 µA ILOAD=0, MODE=1 (Forced PWM) 30 mA I SD Shutdown Supply Current EN=GND 0.1 10 µA VUVLO Under-Voltage Lockout Threshold VIN Rising 2.67 2.80 V VIN Falling 2.1 2.3 V VUVHYST Under-Voltage Lockout Hysteresis 365 mV Logic Pins VIH High-Level Input Voltage 1.05 V VIL Low-Level Input Voltage 0.4 V VLHYST Logic Input Hysteresis Voltage 140 mV IIN Input Bias Current Input Tied to GND or 1 k Ω Resistor to VIN 0.01 1.00 µA IOUTL PGOOD Pull-Down Current VPGOOD=0.4 V 1 mA IOUTH PGOOD HIGH Leakage Current VPGOOD=VIN 0.01 1.00 µA VOUT Regulation VREF Output Reference DC Accuracy, Measured at FB Pin TA=25°C, Forced PWM 0.792 0.800 0.808 V TA=-40°C to 85°C, Forced PWM 0.787 0.800 0.813 V AUTO PFM/PWM 0.784 0.800 0.824 V Load Regulation MODE=VIN (Forced PWM) –0.02 %/A Line Regulation 2.7 V ≤ VIN ≤ 5.5 V, IOUT(DC)=1.5 A -0.16 %/V IREF FB Pin Leakage Current FB=0.8 V 1 nA V OUT Transient Response ILOAD Step 0.1 A to 1.5 A, tR=100 ns -30 mV Power Switch and Protection RDS(ON)P P-Channel MOSFET On Resistance 33 mΩ RDS(ON)N N-Channel MOSFET On Resistance 28 mΩ ILIMPK P-MOS Peak Current Limit Open Loop 5.8 7.5 8.8 A Closed Loop 8 A TLIMIT Thermal Shutdown 155 °C THYST Thermal Shutdown Hysteresis 20 °C VSDWN Input OVP Shutdown Rising Threshold 6.1 V Falling Threshold 5.5 5.8 V Frequency Control fSW Oscillator Frequency 2.1 2.4 3.0 MHz fMODE MODE Pin Synchronization Range External Square-Wave, 30% to 70% Duty Cycle 525 600 700 kHz Soft-Start and Output Discharge tSS Regulator Enable to Regulated VOUT (Rising PGOOD) 1.2 ms RDIS Output Discharge Resistance EN=0 V 175 Ω LOAD OUT I V IN OUT V V |
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