STM32F479AI datasheet(126/208 Pages) STMICROELECTRONICS

126 / 208 page

Electrical characteristics

STM32F479xx

126/208

DocID028010 Rev 2

tME

Mass erase time

Program/erase parallelism

(PSIZE) = x 8

-16

Program/erase parallelism

(PSIZE) = x 16

-11

Program/erase parallelism

(PSIZE) = x 32

-8

tBE

Bank erase time

Program/erase parallelism

(PSIZE) = x 8

-16

Program/erase parallelism

(PSIZE) = x 16

-11

Program/erase parallelism

(PSIZE) = x 32

-8

Vprog

Programming voltage

32-bit program operation

2.7

3.6

16-bit program operation

2.1

3.6

8-bit program operation

1.7

3.6

1. Based on test during characterization.

2. The maximum programming time is measured after 100K erase operations.

Table 51. Flash memory programming with VPP

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1)

1. Guaranteed by design.

Unit

tprog

Double word programming

TA = 0 to +40 °C

VDD = 3.3 V

VPP = 8.5 V

-16

100(2)

2. The maximum programming time is measured after 100K erase operations.

µs

tERASE16KB Sector (16 KB) erase time

230

tERASE64KB Sector (64 KB) erase time

490

tERASE128KB Sector (128 KB) erase time

875

tME

Mass erase time

6.9

tBE

Bank erase time

6.9

Vprog

Programming voltage

2.7

3.6

VPP

VPP voltage range

IPP

Minimum current sunk on

the VPP pin

-10

tVPP(3)

3. VPP should only be connected during programming/erasing.

Cumulative time during

which VPP is applied

hour

Table 50. Flash memory programming (continued)

Symbol

Parameter

Conditions

Min(1)

Typ

Max(1) Unit

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