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STM32F479AI Arkusz danych(PDF) 128 Page - STMicroelectronics |
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STM32F479AI Arkusz danych(HTML) 128 Page - STMicroelectronics |
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128 / 208 page ![]() Electrical characteristics STM32F479xx 128/208 DocID028010 Rev 2 Software recommendations The software flowchart must include the management of runaway conditions such as: • Corrupted program counter • Unexpected reset • Critical Data corruption (control registers...) Prequalification trials Most of the common failures (unexpected reset and program counter corruption) can be reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be applied directly on the device, over the range of specification values. When unexpected behavior is detected, the software can be hardened to prevent unrecoverable errors occurring (see application note AN1015). Electromagnetic Interference (EMI) The electromagnetic field emitted by the device are monitored while a simple application, executing EEMBC? code, is running. This emission test is compliant with SAE IEC61967-2 standard which specifies the test board and the pin loading. 5.3.18 Absolute maximum ratings (electrical sensitivity) Based on three different tests (ESD, LU) using specific measurement methods, the device is stressed in order to determine its performance in terms of electrical sensitivity. Electrostatic discharge (ESD) Electrostatic discharges (a positive then a negative pulse separated by 1 second) are applied to the pins of each sample according to each pin combination. The sample size depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test conforms to the ANSI/ESDA/JEDEC JS-001 and ANSI/ESD S5.3.1 standards. Table 54. EMI characteristics Symbol Parameter Conditions Monitored frequency band Max vs. [fHSE/fCPU] Unit 8/168 MHz 8/180 MHz SEMI Peak level VDD = 3.3 V, TA = 25 °C, TFBGA216 package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks enabled, clock dithering disabled. 0.1 to 30 MHz 2 2 dBµV 30 to 130 MHz 4 1 130 MHz to 1GHz 10 10 SAE EMI Level 3 3 - VDD = 3.3 V, TA = 25 °C, TFBGA216 package, conforming to SAE J1752/3 EEMBC, ART ON, all peripheral clocks enabled, clock dithering enabled 0.1 to 30 MHz 5 -10 dBµV 30 to 130 MHz 3 -15 130 MHz to 1GHz 8 0 SAE EMI level 2 2 - |
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