3

ATF-331M4 DC Electrical Specifications

Symbol Parameter and Test Condition

Units

Min.

Max.

Saturated Drain Current

Vds = 1.5 V, Vgs = 0V

mA

175

237

305

Pinch-off Voltage

Vds = 1.5 V, Ids = 10% of Idss

V

-0.65

-0.5

-0.35

Id

Quiescent Bias Current

Vgs = -0.51 V, Vds = 4 V

mA

—

60

—

Transconductance

Vds = 1.5 V, Gm = Idss/Vp

mmho

360

440

—

Igdo

Gate to Drain Leakage Current

Vgd = -5 V

µA

—

—

1000

Igss

Gate Leakage Current

Vgd = Vgs = -4 V

µA

—

42

600

NF

Noise Figure

f = 2 GHz

Vds = 4 V, Ids = 60 mA

dB

—

0.6

0.8

f = 900 MHz

Vds = 4 V, Ids = 60 mA

dB

—

0.5

—

Ga

Associated Gain

f = 2 GHz

Vds = 4 V, Ids = 60 mA

dB

13.5

15

16.5

f = 900 MHz

Vds = 4 V, Ids = 60 mA

dB

—

21

—

OIP3

f = 2 GHz, 5 dBm Pout/Tone

Vds = 4 V, Ids = 60 mA

dBm

28.5

31

—

f = 900 MHz, 5 dBm Pout/Tone

Vds = 4 V, Ids = 60 mA

dBm

—

30.8

—

P1dB

1dB Compressed

f = 2 GHz

Vds = 4 V, Ids = 60 mA

dBm

—

19

—

f = 900 MHz

Vds = 4 V, Ids = 60 mA

dBm

—

18

—

Notes:

1. Guaranteed at wafer probe level

2. Typical values are determined from a sample size of 349 parts from 4 wafers.

3. Measurements obtained using production test board described in Figure 5.

Input

50

Ω Input

Transmission Line

Including

Gate Bias T

(0.3 dB loss)

Input

Matching Circuit

Γ_mag = 0.13

Γ_ang = 113°

(0.3 dB loss)

50

Ω Output

Transmission Line

Including

Gate Bias T

(0.5 dB loss)

DUT

Output

Figure 5. Block diagram of 2 GHz production test board used for Noise Figure, Associated Gain, P1dB, and OIP3 measurements. This circuit

represents a trade-off between an optimal noise match and a realizable match based on production test requirements. Circuit losses have been

de-embedded from actual measurements.