ATF331M4 datasheet(6/17 Pages) HP

6 / 17 page

Notes:

1. Measurements made on fixed tuned

production test board that was tuned for

optimal gain match with reasonable noise

figure at 4V 60 mA bias. This circuit

represents a trade-off between an optimal

noise match, maximum gain match and a

realizable match based on production test

board requirements. Circuit losses have been

de-embedded from actual measurements.

2. Quiescent drain current, Idsq, is set with zero

RF drive applied. As P1dB is approached, the

drain current may increase or decrease

depending on frequency and dc bias point. At

lower values of Idsq the device is running

closer to class B as power output approaches

P1dB. This results in higher P1dB and higher

PAE (power added efficiency) when compared

to a device that is driven by a constant

current source as is typically done with active

biasing.

ATF-331M4 Typical Performance Curves, continued

Figure 12. Fmin vs. Frequency at 4 V, 60 mA.

FREQUENCY (GHz)

010

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

Figure 14. Fmin & Ga vs. Frequency and Temp.

Vd = 4 V , Ids = 60 mA.

FREQUENCY (GHz)

°C

-40

°C

2.0

1.5

1.0

0.5

Figure 15. P1dB, OIP3 vs. Frequency and

Temp at Vd = 4 V , Ids = 60 mA.

FREQUENCY (GHz)

°C

-40

°C

Figure 16. OIP3, P1dB, NF and Gain vs.

Bias[1,2] at 3.9 GHz.

Idsq (mA)

100

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

Figure 13. Associated Gain vs. Frequency

at 4 V , 60 mA.

FREQUENCY (GHz)

010

Figure 17. OIP3, P1dB, NF at 5.8 GHz.

Idsq (mA)

100

P1dB

OIP3

Gain

3.5

3.0

2.5

2.0

1.5

1.0

0.5

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