STF110N10F7 datasheet(1/16 Pages) STMICROELECTRONICS

Numer części	STF110N10F7

Szczegółowy opis	N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages

PDF	16 Pages

Scroll/Zoom	100%

Producent	STMICROELECTRONICS [STMicroelectronics]

Strona internetowa	http://www.st.com

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1 / 16 page

This is information on a product in full production.

July 2013

DocID024058 Rev 2

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16

STF110N10F7,

STP110N10F7

N-channel 100 V, 5.1 m

Ω typ., 110 A, STripFET™ VII DeepGATE™

Power MOSFETs in TO-220FP and TO-220 packages

Datasheet

- production data

Figure 1. Internal schematic diagram

Features

• Ultra low on-resistance

• 100% avalanche tested

Applications

• Switching applications

Description

These devices utilize the 7th generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest RDS(on) in all

packages.

TO-220

TO-220FP

1

2

3

1

2

3

TAB

Order codes

VDS RDS(on) max

ID

PTOT

STF110N10F7

100 V

0.007

Ω

45 A

30 W

STP110N10F7

110 A

150 W

Table 1. Device summary

Order codes

Marking

Package

Packaging

STF110N10F7

110N10F7

TO-220FP

Tube

STP110N10F7

TO-220

www.st.com

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