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STF110N10F7 Arkusz danych(PDF) 3 Page - STMicroelectronics |
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STF110N10F7 Arkusz danych(HTML) 3 Page - STMicroelectronics |
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3 / 16 page  DocID024058 Rev 2 3/16 STF110N10F7, STP110N10F7 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220FP TO-220 VDS Drain-source voltage 100 V VGS Gate-source voltage ± 20 V ID (1) 1. This value is rated according to Rthj-c. Drain current (continuous) at TC = 25 °C 45 110 A ID (1) Drain current (continuous) at TC = 100 °C 32 76 A IDM (2) 2. Limited by safe operating area. Drain current (pulsed) 180 415 A PTOT (1) Total dissipation at Tc = 25 °C 30 150 W EAS (3) 3. Starting TJ=25 °C, ID=18, VDD=50 V. Single pulse avalanche energy 490 mJ TJ Operating junction temperature -55 to 175 °C Tstg Storage temperature °C Table 3. Thermal resistance Symbol Parameter Value Unit TO-220FP TO-220 Rthj-case Thermal resistance junction-case 5.00 1.00 °C/W Rthj-amb Thermal resistance junction-amb 62.50 °C/W |
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