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STF110N10F7 Arkusz danych(PDF) 5 Page - STMicroelectronics |
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STF110N10F7 Arkusz danych(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID024058 Rev 2 5/16 STF110N10F7, STP110N10F7 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min Typ. Max. Unit ISD Source-drain current: For TO-220FP - 45 A For TO-220 - 110 A ISDM (1) 1. Pulse width limited by safe operating area. Source-drain current (pulsed): For TO-220FP - 180 A For TO-220 - 415 A VSD (2) 2. Pulsed: pulse duration=300 µs, duty cycle 1.5% Forward on voltage For TO-220FP: ISD = 22.5 A, VGS=0 -1.2 V For TO-220: ISD = 55 A, VGS=0 trr Reverse recovery time ISD = 110 A, di/dt = 100 A/µs, VDD=80 V, Tj=150 °C -77 ns Qrr Reverse recovery charge - 150 nC IRRM Reverse recovery current - 4.3 A |
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