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STF110N10F7 Arkusz danych(PDF) 5 Page - STMicroelectronics

Numer części STF110N10F7
Szczegółowy opis  N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages
PDF  16 Pages
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Producent  STMICROELECTRONICS [STMicroelectronics]
Strona internetowa  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STF110N10F7 Arkusz danych(HTML) 5 Page - STMicroelectronics

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STF110N10F7, STP110N10F7
Electrical characteristics
Table 7. Source drain diode
Symbol
Parameter
Test conditions
Min
Typ.
Max.
Unit
ISD
Source-drain current:
For TO-220FP
-
45
A
For TO-220
-
110
A
ISDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed):
For TO-220FP
-
180
A
For TO-220
-
415
A
VSD
(2)
2.
Pulsed: pulse duration=300 µs, duty cycle 1.5%
Forward on voltage
For TO-220FP:
ISD = 22.5 A, VGS=0
-1.2
V
For TO-220:
ISD = 55 A, VGS=0
trr
Reverse recovery time
ISD = 110 A,
di/dt = 100 A/µs,
VDD=80 V, Tj=150 °C
-77
ns
Qrr
Reverse recovery charge
-
150
nC
IRRM
Reverse recovery current
-
4.3
A



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