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IL30 Arkusz danych(PDF) 2 Page - Vishay Siliconix

Numer części IL30
Szczegółowy opis  Optocoupler, Photodarlington Output, (Single, Dual, Quad Channel)
PDF  10 Pages
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Producent  VISHAY [Vishay Siliconix]
Strona internetowa  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

IL30 Arkusz danych(HTML) 2 Page - Vishay Siliconix

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IL30, ILD55, ILQ30, ILQ31, ILQ55
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 28-Jul-14
2
Document Number: 83621
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Note
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
VALUE
UNIT
INPUT
Peak reverse voltage
VRM
3V
Forward continuous current
IF
60
mA
Power dissipation
Pdiss
100
mW
Derate linearly from 25 °C
1.33
mW/°C
OUTPUT
Collector emitter breakdown voltage
IL30
BVCEO
30
V
ILQ30
BVCEO
30
V
ILD55
BVCEO
55
V
ILQ55
BVCEO
55
V
Collector (load) current
IC
125
mA
Power dissipation
Pdiss
150
mW
Derate linearly from 25 °C
2mW/°C
COUPLER
Total package power dissipation
IL30
Ptot
250
mW
ILD55
Ptot
400
mW
ILQ30
Ptot
500
mW
ILQ31
Ptot
500
mW
ILQ55
Ptot
500
mW
Derate linearly from 25 °C
IL30
3.3
mW/°C
ILD55
3.3
mW/°C
ILQ30
6.67
mW/°C
ILQ31
6.67
mW/°C
ILQ55
6.67
mW/°C
Isolation test voltage
VISO
5300
VRMS
Creepage distance
≥ 7mm
Clearance distance
≥ 7mm
Comparative tracking index
CTI
175
Storage temperature
Tstg
-55 to +125
°C
COUPLER
Operating temperature
Tamb
-55 to +100
°C
Lead soldering time at 260 °C
10
s
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage
IF = 20 mA
VF
1.25
1.5
V
Reverse current
VR = 3 V
IR
0.1
10
μA
Capacitance
VR = 0 V
CO
25
pF
OUTPUT
Collector emitter breakdown voltage
IC = 100 μA
BVCEO
30/55
V
Collector emitter leakage current
VCE = 10 V, IF = 0 A
ICEO
1
100
nA
Collector emitter capacitance
VCE = 10 V, f = 1 MHz
CCE
3.4
pF
COUPLER
Collector emitter saturation voltage
IC = 50 mA, IF = 50 mA
VCEsat
0.9
1
V
Isolation test voltage
5300
VRMS
Isolation resistance
RIO
1012
Ω
Capacitance (input to output)
CIO
0.5
pF



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