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IL30 Arkusz danych(PDF) 2 Page - Vishay Siliconix |
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IL30 Arkusz danych(HTML) 2 Page - Vishay Siliconix |
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2 / 10 page ![]() IL30, ILD55, ILQ30, ILQ31, ILQ55 www.vishay.com Vishay Semiconductors Rev. 1.8, 28-Jul-14 2 Document Number: 83621 For technical questions, contact: optocoupleranswers@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability. Note • Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT INPUT Peak reverse voltage VRM 3V Forward continuous current IF 60 mA Power dissipation Pdiss 100 mW Derate linearly from 25 °C 1.33 mW/°C OUTPUT Collector emitter breakdown voltage IL30 BVCEO 30 V ILQ30 BVCEO 30 V ILD55 BVCEO 55 V ILQ55 BVCEO 55 V Collector (load) current IC 125 mA Power dissipation Pdiss 150 mW Derate linearly from 25 °C 2mW/°C COUPLER Total package power dissipation IL30 Ptot 250 mW ILD55 Ptot 400 mW ILQ30 Ptot 500 mW ILQ31 Ptot 500 mW ILQ55 Ptot 500 mW Derate linearly from 25 °C IL30 3.3 mW/°C ILD55 3.3 mW/°C ILQ30 6.67 mW/°C ILQ31 6.67 mW/°C ILQ55 6.67 mW/°C Isolation test voltage VISO 5300 VRMS Creepage distance ≥ 7mm Clearance distance ≥ 7mm Comparative tracking index CTI 175 Storage temperature Tstg -55 to +125 °C COUPLER Operating temperature Tamb -55 to +100 °C Lead soldering time at 260 °C 10 s ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT INPUT Forward voltage IF = 20 mA VF 1.25 1.5 V Reverse current VR = 3 V IR 0.1 10 μA Capacitance VR = 0 V CO 25 pF OUTPUT Collector emitter breakdown voltage IC = 100 μA BVCEO 30/55 V Collector emitter leakage current VCE = 10 V, IF = 0 A ICEO 1 100 nA Collector emitter capacitance VCE = 10 V, f = 1 MHz CCE 3.4 pF COUPLER Collector emitter saturation voltage IC = 50 mA, IF = 50 mA VCEsat 0.9 1 V Isolation test voltage 5300 VRMS Isolation resistance RIO 1012 Ω Capacitance (input to output) CIO 0.5 pF |
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