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ECT25S80 Arkusz danych(PDF) 1 Page - E-CMOS Corporation

Numer części ECT25S80
Szczegółowy opis  8M BIT SPI NOR FLASH
PDF  45 Pages
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Producent  E-CMOS [E-CMOS Corporation]
Strona internetowa  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

ECT25S80 Arkusz danych(HTML) 1 Page - E-CMOS Corporation

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E-CMOS Corp. (www.ecmos.com.tw)
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5B16N-Rev.F001
ECT25S80
8M BIT SPI NOR FLASH
General Description
The ECT25S80 is 8M-bit Serial Peripheral Interface(SPI) Flash memory, and supports the Dual/Quad SPI:
Serial Clock, Chip Select, Serial Data I/O0 (SI),I/O1(SO),I/O2(/WP),and I/O3(/HOLD). The Dual I/O
data
is transferred with speed of 216Mbits/s and the Quad I/O & Quad output data is transferred with
speed of
432Mbits/s. The device uses a single low voltage power supply, ranging from 2.7 Volt to 3.6 Volt.
Additionally ,the device supports JEDEC standard manufacturer and device ID and three 256-bytes
Security Registers.
In order to meet environmental requirements, E-CMOS offers an 8-pin SOP 150 mil,208mil, 8-pin DIP 8L
Features
● Serial Peripheral Interface(SPI)
- Standard SPI: SCLK, /CS, SI, SO, /WP, /HOLD
- Dual SPI: SCLK, /CS, IO0, IO1, /WP, /HOLD
- Quad SPI: SCLK, /CS, IO0, IO1, IO2, IO3
● Read
- Normal Read (Serial): 50MHz clock rate
- Fast Read (Serial): 108MHz clock rate
- Dual/Quad (Multi-I/O) Read: 108MHz clock rate
● Program
- Serial-input Page Program up to 256bytes
- Program Suspend and Resume
● Erase
- Block erase (64/32 KB)
- Sector erase (4 KB)
- Chip erase
- Erase Suspend and Resume
● Program/Erase Speed
- Page Program time: 0.7ms typical
- Sector Erase time: 60ms typical
- Block Erase time: 0.2/0.4s typical
- Chip Erase time: 7s typical
● Flexible Architecture
- Sector of 4K-byte
- Block of 32/64K-byte
● Low Power Consumption
- 20mA maximum active current
- 5uA maximum power down current
● Software/Hardware Write Protection
- 3x256-Byte Security Registers with OTP Lock


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