ECT25S80 datasheet(27/45 Pages) E-CMOS

27 / 45 page

E-CMOS Corp. (www.ecmos.com.tw)

Page 27 of 45

5B16N-Rev.F001

ECT25S80

8M BIT SPI NOR FLASH

Deep Power-Down (B9H)

Although

the standby current during normal operation is relatively low, standby current can

Be further reduced with the Deep Power-down instruction. The lower power consumption

makes the Deep Power-down (DPD) instruction especially useful for battery powered

applications (see ICC1 and ICC2). The instruction is initiated by driving the /CS pin low and

shifting the instruction code “

B9h” as shown in Figure 22.

The /CS pin must be driven high after the eighth bit has been latched. If this is not done the

Deep Power down instruction will not be executed. After /CS is driven high, the power-down

state will entered within the time duration of tDP. While in the power-down state only the

Release from Deep Power-down / Device ID instruction, which restores the device to normal

operation,will be recognized. All other Instructions are ignored. This includes the Read Status

instruction also makes the Power Down state a useful condition for securing

maximum

write protection.The device always powers-up in the normal operation with the standby current

of ICC1.

Figure 22. Deep Power-Down Sequence Diagram

Release from Deep Power-Down/Read Device ID (ABH)

The Release from Power-Down or Device ID instruction is a multi-purpose instruction. It can

Be used to release the device from the Power-Down state or obtain the devices electronic

identification (ID) number.

See Figure23a, to release the device from the Power-Down state, the instruction is issued by

driving the /CS pi

n low, shifting the instruction code “ABH” and driving /CS high Release from

Power-Down will

take the time duration of

tRES1 (See AC Characteristics) before the

device will resume normal operation and other instruction are accepted. The /CS pin must

remain high during the tRES1 time duration.

When used only to obtain the Device ID while not in the Power-Down state, the instruction is

initiated by driving the /CS

pin low and shifting the instruction code “ABH” followed by 3-

dummy byte. The Device ID bits are then shifted out on the falling edge of SCLK with most

significant bit(MSB) first as shown in Figure 23b. The DeviceID value is listed in Manufacturer

and Device Identification table.The Device ID can be read continuously. The instruction is

completed by driving /CS high.

When used to release the device from the Power-Down state and obtain the Device ID, the

instruction is the same as previously described, and shown in Figure 23b, except that after /CS

is driven high it must remain high for a time duration of tRES2 (See AC Characteristics). After

ECT25S80 Arkusz danych(PDF) 27 Page - E-CMOS Corporation

ECT25S80 Arkusz danych(HTML) 27 Page - E-CMOS Corporation

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45

Arkusz danych Pobierz

Link URL