ECT25S80 datasheet(40/45 Pages) E-CMOS

40 / 45 page

E-CMOS Corp. (www.ecmos.com.tw)

Page 40 of 45

5B16N-Rev.F001

ECT25S80

8M BIT SPI NOR FLASH

Note:

1. Tested with clock frequency lower than 50 MHz.

2. tW can be up to 45 ms at -40℃ during the characterization of the current design. It will be

improved in the future design.

Symbol

Parameter

Min.

Typ.

Max.

Unit.

tSHSL

/CS High Time（read/write）

tSHQZ

Output Disable Time

tCLQX

Output Hold Time

tDVCH

Data In Setup Time

tCHDX

Data In Hold Time

tHLCH

/Hold Low Setup Time (relative to Clock)

tHHCH

/Hold High Setup Time (relative to Clock)

tCHHL

/Hold High Hold Time (relative to Clock)

tCHHH

/Hold Low Hold Time (relative to Clock)

tHLQZ

/Hold Low To High-Z Output

tHHQX

/Hold Low To Low-Z Output

tCLQV

Clock Low To Output Valid

tWHSL

Write Protect Setup Time Before /CS Low

tSHWL

Write Protect Hold Time After /CS High

100

tDP

/CS High To Deep Power-Down Mode

0.1

µs

tRES1

/CS High To Standby Mode Without Electr

onic

Signature Read

µs

tRES2

/CS High To Standby Mode With Ele

ctronic

Signature Read

1.5

µs

tSUS

/CS High To Next Instruction After Suspend

Write Status Register Cycle Time

15(2)

tPP

Page Programming Time

0.7

2.4

tSE

Sector Erase Time

300

tBE

Block Erase Time(32K Bytes/64K Bytes)

0.2/0.4

1/1.2

tCE

Chip Erase Time

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