ATSAMB11XR datasheet(48/87 Pages) MICROCHIP

48 / 87 page

With respect to TX power, different (higher/lower) RF output power settings may be used for

specific antennas and/or enclosures, in which case recertification may be required.

Country specific settings (as per the Module Certifications) should be programmed at the Host

product factory to match the intended Destination. Regulatory bodies prohibit exposing the settings

to the end user. This requirement needs to be taken care of via Host implementation.

10.6

Current Consumption in Various Device States

Table 10-6. Device State Current Consumption

Device State

C_EN VDDIO IVBAT+IVDDIO (typical) (2)

Power_Down

Off

0.03 µA

Ultra_Low_Power with BLE timer, with RTC (1)

2.03 µA

MCU_Only, idle

1.35 mA

BLE_On_Receive @channel 37 (2402 MHz)

5.26 mA

BLE_On_Transmit, 0 dBm output power @Channel 37 (2402

MHz)

4.18 mA

BLE_On_Transmit, 0 dBm output power @Channel 39 (2480

MHz)

3.71 mA

BLE_On_Transmit, 3 dBm output power @Channel 37 (2480

MHz)

5.69 mA

BLE_On_Transmit, 3 dBm output power @Channel 39 (2480

MHz)

4.65 mA

Note:

Sleep clock derived from external 32.768 kHz crystal specified for CL = 7 pF, using the default on-

chip capacitance only, without using external capacitance.

Measurement conditions:

2.1.

VBAT=3.3V

2.2.

VDDIO=3.3V

2.3.

Temperature=25°C

2.4.

These measurements are taken with FW BluSDK Smart V6.1.6991

ATSAMB11XR/ZR

Datasheet Preliminary

DS70005342A-page 48

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