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CYUSB302X Arkusz danych(PDF) 7 Page - Cypress Semiconductor

Numer części CYUSB302X
Szczegółowy opis  SD3??USB and Mass Storage Peripheral Controller
PDF  34 Pages
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Producent  CYPRESS [Cypress Semiconductor]
Strona internetowa  http://www.cypress.com
Logo CYPRESS - Cypress Semiconductor

CYUSB302X Arkusz danych(HTML) 7 Page - Cypress Semiconductor

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Document Number: 001-55190 Rev. *L
Page 7 of 34
CYUSB302x
Configuration Fuse
Fuse options are available for specific usage models. Contact
Cypress Applications/Marketing for details.
Digital I/Os
SD3 provides firmware controlled pull-up or pull-down resistors
internally on all digital I/O pins. The pins can be pulled high
through an internal 50-k
 resistor or can be pulled low through
an internal 10-k
 resistor to prevent the pins from floating. The
I/O pins may have the following states:
Tristated (High-Z)
Weak pull-up (through internal 50 k)
Pull down (through internal 10 k)
Hold (I/O hold its value) when in low power modes
All unused I/Os should be pulled high by using the internal
pull-up resistors. All unused outputs should be left floating. All
I/Os can be driven at full-strength, three-quarter strength,
half-strength, or quarter-strength. These drive strengths are
configured based on each interface.
EMI
SD3 meets EMI requirements outlined by FCC 15B (USA) and
EN55022 (Europe) for consumer electronics. SD3 can tolerate
reasonable EMI, conducted by aggressor, outlined by these
specifications and continue to function as expected.
System Level ESD
SD3 has built-in ESD protection on the D+, D–, GND pins on the
USB interface. The ESD protection levels provided on these
ports are:
±2.2-KV human body model (HBM) based on JESD22-A114
Specification
±6-KV contact discharge and ±8-KV air gap discharge based
on IEC61000-4-2 level 3A
±8-KV contact discharge and ±15-KV air gap discharge based
on IEC61000-4-2 level 4C.
This protection ensures the device continues to function after
ESD events up to the levels stated.
The SuperSpeed USB signals (SSRX+, SSRX-, SSTX+, SSTX-)
and S0/S1_INS have up to ±2.2 KV HBM internal ESD
protection.
Pinout for BGA
Figure 2. SD3 BGA Ball Map (Top View)
1
2
3
4
56
78
910
11
A
U3VSSQ
U3RXVDDQ
SSRXM
SSRXP
SSTXP
SSTXM
AV DD
VSS
DP
DM
NC
B
VIO4
FSLC[0]
R_USB3
FSLC[1]
U3TXVDDQ
CVDDQ
AV SS
V SS
VSS
VD D
NC
C
GPIO[54]
GPIO[55]
VDD
GPIO[57]
RESET#
XTALIN
XTALOUT
R_USB2
OTG_ID
NC
VIO5
D
GPIO[50]
GPIO[51]
GPIO[52]
GPIO[53]
GPIO[56]
CLKIN_32
CLKIN
VSS
I2C_GPIO[58]
I2C_GPIO[59]
O[60]
E
GPIO[47]
VSS
S1VDDQ
GPIO[49]
GPIO[48]
FSLC[2]
NC
NC
VDD
V BAT T
V BUS
F
S0VDDQ
GPIO[45]
GPIO[44]
GPIO[41]
GPIO[46]
NC
GPIO[2]
GPIO[5]
GPIO[1]
GPIO[0]
VDD
G
VSS
GPIO[42]
GPIO[43]
GPIO[30]
GPIO[25]
GPIO[22]
GPIO[21]
GPIO[15]
GPIO[4]
GPIO[3]
VSS
H
VDD
GPIO[39]
GPIO[40]
GPIO[31]
GPIO[29]
GPIO[26]
GPIO[20]
GPIO[24]
GPIO[7]
GPIO[6]
S2VDDQ
J
GPIO[38]
GPIO[36]
GPIO[37]
GPIO[34]
GPIO[28]
GPIO[16]
GPIO[19]
GPIO[14]
GPIO[9]
GPIO[8]
VDD
K
GPIO[35]
GPIO[33]
VSS
VSS
GPIO[27]
GPIO[23]
GPIO[18]
GPIO[17]
GPIO[13]
GPIO[12]
GPIO[10]
L
VSS
VSS
VSS
GPIO[32]
VDD
VSS
VDD
NC
S2VDDQ
GPIO[11]
VSS



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